What are Transistors - FETs, MOSFETs - Single ?
Parts in this category
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Compare stocked parts across manufacturers and distributors, then add lines to your RFQ.
| Part & Mfr | Total Stock | Pricing & RFQ | Current | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | FET Feature | FET Type | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Operating Temperature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Vgs (Max) | Vgs(th) (Max) @ Id | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
On Semiconductor
|
5,000
|
Price on request
5,000
|
14A (Tc) | 100 V | 5V | - | N-Channel | 24 nC @ 5 V | 755 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 62W (Tc) | 120mOhm @ 7A, 5V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 2V @ 250µA | |
Infineon Technologies
|
5,000
|
Price on request
5,000
|
120mA (Ta) | 600 V | 0V, 10V | Depletion Mode | N-Channel | 4.9 nC @ 5 V | 146 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.8W (Ta) | 45Ohm @ 120mA, 10V | PG-SOT223-4-21 | MOSFET (Metal Oxide) | ±20V | 1V @ 94µA | |
On Semiconductor
|
5,000
|
Price on request
5,000
|
19A (Tc) | 100 V | 10V | - | P-Channel | 61 nC @ 10 V | 1400 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 150W (Tc) | 200mOhm @ 11A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
|
5,000
|
Price on request
5,000
|
3.8A (Ta) | 55 V | 4V, 10V | - | N-Channel | 48 nC @ 10 V | 870 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 1W (Ta) | 40mOhm @ 3.8A, 10V | SOT-223 | MOSFET (Metal Oxide) | ±16V | 2V @ 250µA | |
STMicroelectronics
|
5,000
|
Price on request
5,000
|
40A (Tc) | 24 V | 4.5V, 10V | - | N-Channel | 11 nC @ 4.5 V | 990 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 60W (Tc) | 11mOhm @ 20A, 10V | DPAK | MOSFET (Metal Oxide) | ±16V | 1V @ 250µA | |
STMicroelectronics
|
5,000
|
Price on request
5,000
|
9A (Tc) | 600 V | 10V | - | N-Channel | 16 nC @ 10 V | 538 pF @ 100 V | Through Hole | 150°C (TJ) | 25W (Tc) | 450mOhm @ 4.5A, 10V | TO-220FP | MOSFET (Metal Oxide) | ±25V | 4V @ 250µA | |
On Semiconductor
|
5,000
|
Price on request
5,000
|
3A (Ta) | 20 V | 1.5V, 4.5V | - | P-Channel | 13 nC @ 10 V | 800 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.9W (Ta) | 85mOhm @ 1A, 4.5V | 6-WLCSP (1x1.5) | MOSFET (Metal Oxide) | ±8V | 1.5V @ 250µA | |
On Semiconductor
|
5,000
|
Price on request
5,000
|
35A (Ta), 250A (Tc) | 60 V | 4.5V, 10V | - | N-Channel | 89 nC @ 10 V | 6680 pF @ 30 V | Surface Mount | -55°C ~ 150°C (TJ) | 3.3W (Ta), 160W (Tc) | 1.3mOhm @ 50A, 10V | 5-DFN (5x6) (8-SOFL) | MOSFET (Metal Oxide) | ±20V | 2V @ 250µA | |
STMicroelectronics
|
5,000
|
Price on request
5,000
|
19A (Tc) | 600 V | 10V | - | N-Channel | 60 nC @ 10 V | 2050 pF @ 50 V | Through Hole | 150°C (TJ) | 150W (Tc) | 180mOhm @ 9.5A, 10V | I2PAK | MOSFET (Metal Oxide) | ±25V | 4V @ 250µA | |
Diodes Incorporated
|
4,991
|
Price on request
4,991
|
4.6A (Ta) | 20 V | 2.5V, 4.5V | - | P-Channel | 10.1 nC @ 4.5 V | 820 pF @ 15 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.25W (Ta) | 40mOhm @ 4.6A, 4.5V | SC-59-3 | MOSFET (Metal Oxide) | ±12V | 1.2V @ 250µA | |
Infineon Technologies
|
4,986
|
Price on request
4,986
|
21A (Tc) | 150 V | 8V, 10V | - | N-Channel | 12 nC @ 10 V | 890 pF @ 75 V | Surface Mount | -55°C ~ 150°C (TJ) | 57W (Tc) | 52mOhm @ 18A, 10V | PG-TSDSON-8 | MOSFET (Metal Oxide) | ±20V | 4V @ 35µA | |
On Semiconductor
|
4,981
|
Price on request
4,981
|
8.5A (Ta), 41A (Tc) | 100 V | 4.5V, 10V | - | N-Channel | 66 nC @ 10 V | 3468 pF @ 25 V | Surface Mount | -55°C ~ 175°C (TJ) | 3.9W (Ta), 90W (Tc) | 20mOhm @ 20A, 10V | DPAK | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
Diodes Incorporated
|
4,980
|
Price on request
4,980
|
7.3A (Ta), 44A (Tc) | 100 V | 4.5V, 10V | - | N-Channel | 33.3 nC @ 10 V | 1871 pF @ 50 V | Surface Mount | -55°C ~ 175°C (TJ) | 1.3W (Ta), 46W (Tc) | 16mOhm @ 20A, 10V | PowerDI5060-8 | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
STMicroelectronics
|
4,972
|
Price on request
4,972
|
60A (Tc) | 300 V | 10V | - | N-Channel | 164 nC @ 10 V | 5930 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 320W (Tc) | 45mOhm @ 30A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
|
4,971
|
Price on request
4,971
|
3.8A (Ta) | 20 V | 1.5V, 4.5V | - | P-Channel | 25 nC @ 4.5 V | 1570 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.9W (Ta) | 64mOhm @ 2A, 4.5V | 6-WLCSP (1.0x1.5) | MOSFET (Metal Oxide) | ±8V | 1V @ 250µA | |
Toshiba
|
4,970
|
Price on request
4,970
|
5.5A (Ta) | 20 V | 1.8V, 4.5V | - | P-Channel | 19 nC @ 5 V | 1430 pF @ 10 V | Surface Mount | 150°C (TJ) | 700mW (Ta) | 40mOhm @ 2.8A, 4.5V | VS-6 (2.9x2.8) | MOSFET (Metal Oxide) | ±8V | 1.2V @ 200µA | |
Infineon Technologies
|
4,970
|
Price on request
4,970
|
25A (Tc) | 200 V | 10V | - | N-Channel | 38 nC @ 10 V | 1710 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 144W (Tc) | 72.5mOhm @ 15A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 5V @ 100µA | |
STMicroelectronics
|
4,970
|
Price on request
4,970
|
12A (Tc) | 500 V | 10V | - | N-Channel | 27 nC @ 10 V | 816 pF @ 50 V | Through Hole | -55°C ~ 150°C (TJ) | 25W (Tc) | 320mOhm @ 6A, 10V | TO-220FP | MOSFET (Metal Oxide) | ±25V | 4V @ 100µA | |
Vishay
|
4,962
|
Price on request
4,962
|
3.1A (Tc) | 1000 V | 10V | - | N-Channel | 80 nC @ 10 V | 980 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 125W (Tc) | 5Ohm @ 1.9A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
|
4,960
|
Price on request
4,960
|
65A (Tc) | 60 V | 10V | - | N-Channel | 65 nC @ 10 V | 2410 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 150W (Tc) | 16mOhm @ 32.5A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±25V | 4V @ 250µA | |
On Semiconductor
|
4,958
|
Price on request
4,958
|
6A (Ta) | 20 V | 2.5V, 4.5V | - | P-Channel | 19 nC @ 4.5 V | 1187 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 3W (Ta) | 50mOhm @ 6A, 4.5V | SOT-223-4 | MOSFET (Metal Oxide) | ±8V | 1V @ 250µA | |
On Semiconductor
|
4,950
|
Price on request
4,950
|
142A (Tc) | 650 V | 15V, 18V | - | N-Channel | 283 nC @ 18 V | 4790 pF @ 325 V | Through Hole | -55°C ~ 175°C (TJ) | 500W (Tc) | 18mOhm @ 75A, 18V | TO-247-4L | SiCFET (Silicon Carbide) | +22V, -8V | 4.3V @ 25mA | |
On Semiconductor
|
4,950
|
Price on request
4,950
|
23A (Tc) | 600 V | 10V | - | N-Channel | 75 nC @ 10 V | 2434 pF @ 380 V | Through Hole | -55°C ~ 150°C (TJ) | 227W (Tc) | 165mOhm @ 11.5A, 10V | TO-247-3 | MOSFET (Metal Oxide) | ±20V | 3.5V @ 250µA | |
IXYS
|
4,948
|
Price on request
4,948
|
7A (Tc) | 1000 V | 10V | - | N-Channel | 47 nC @ 10 V | 2590 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 300W (Tc) | 1.9Ohm @ 3.5A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±30V | 6V @ 1mA | |
On Semiconductor
|
4,941
|
Price on request
4,941
|
56A (Tc) | 100 V | 10V | - | N-Channel | 130 nC @ 20 V | 2000 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 200W (Tc) | 25mOhm @ 56A, 10V | TO-220-3 | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
|
4,938
|
Price on request
4,938
|
2A (Tc) | 800 V | 10V | - | N-Channel | 9.6 nC @ 10 V | 400 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 32W (Tc) | 3.4Ohm @ 1A, 10V | I-PAK | MOSFET (Metal Oxide) | ±20V | 4.5V @ 200µA | |
STMicroelectronics
|
4,926
|
Price on request
4,926
|
9A (Tc) | 500 V | 10V | - | N-Channel | 39.2 nC @ 10 V | 1219 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 30W (Tc) | 700mOhm @ 4.5A, 10V | TO-220FP | MOSFET (Metal Oxide) | ±30V | 4.5V @ 100µA | |
Toshiba
|
4,925
|
Price on request
4,925
|
7A (Ta) | 600 V | 10V | - | N-Channel | 16 nC @ 10 V | 490 pF @ 300 V | Surface Mount | 150°C (TJ) | 60W (Tc) | 670mOhm @ 3.5A, 10V | DPAK | MOSFET (Metal Oxide) | ±30V | 4.5V @ 350µA | |
Diodes Incorporated
|
4,914
|
Price on request
4,914
|
13A (Ta) | 30 V | 4.5V, 10V | - | P-Channel | 60.4 nC @ 10 V | 2748 pF @ 20 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W (Ta) | 11mOhm @ 13A, 10V | 8-SO | MOSFET (Metal Oxide) | ±20V | 2V @ 250µA | |
STMicroelectronics
|
4,900
|
Price on request
4,900
|
9A (Tc) | 300 V | 10V | - | N-Channel | 35 nC @ 10 V | 670 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 90W (Tc) | 400mOhm @ 4.5A, 10V | TO-220 | MOSFET (Metal Oxide) | ±30V | 4.5V @ 50µA | |
Renesas
|
4,890
|
Price on request
4,890
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
On Semiconductor
|
4,884
|
Price on request
4,884
|
1.1A (Ta) | 30 V | 4.5V, 10V | - | N-Channel | 3.5 nC @ 5 V | 140 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 500mW (Ta) | 160mOhm @ 1.4A, 10V | SuperSOT-3 | MOSFET (Metal Oxide) | ±20V | 2V @ 250µA | |
Infineon Technologies
|
4,883
|
Price on request
4,883
|
97A (Tc) | 100 V | 10V | - | N-Channel | 120 nC @ 10 V | 4820 pF @ 50 V | Through Hole | -55°C ~ 175°C (TJ) | 230W (Tc) | 9mOhm @ 58A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 150µA | |
STMicroelectronics
|
4,868
|
Price on request
4,868
|
45A (Tc) | 650 V | 18V, 20V | - | N-Channel | 73 nC @ 20 V | 1370 pF @ 400 V | Surface Mount | -55°C ~ 175°C (TJ) | 208W (Tc) | 67mOhm @ 20A, 20V | H2PAK-7 | SiCFET (Silicon Carbide) | +22V, -10V | 3.2V @ 1mA | |
Diodes Incorporated
|
4,850
|
Price on request
4,850
|
9.1A (Ta) | 50 V | 4.5V, 10V | - | N-Channel | 14 nC @ 10 V | 902.7 pF @ 25 V | Surface Mount | -55°C ~ 150°C (TJ) | 820mW (Ta) | 15mOhm @ 8A, 10V | U-DFN2020-6 (Type F) | MOSFET (Metal Oxide) | ±16V | 2V @ 250µA | |
STMicroelectronics
|
4,850
|
Price on request
4,850
|
30A (Tc) | 600 V | 10V | - | N-Channel | 44.3 nC @ 10 V | 1960 pF @ 100 V | Through Hole | -55°C ~ 150°C (TJ) | 40W (Tc) | 99mOhm @ 15A, 10V | TO-220FP | MOSFET (Metal Oxide) | ±25V | 4.75V @ 250µA | |
NXP Semiconductors
|
4,850
|
Price on request
4,850
|
11A (Tc) | 55 V | 10V | - | N-Channel | 5.5 nC @ 10 V | 322 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 36W (Tc) | 150mOhm @ 5A, 10V | TO-220AB | MOSFET (Metal Oxide) | ±20V | 4V @ 1mA | |
ROHM Semiconductor
|
4,850
|
Price on request
4,850
|
3A (Ta) | 30 V | 4V, 10V | - | P-Channel | 6 nC @ 5 V | 440 pF @ 10 V | Surface Mount | 150°C (TJ) | 1.25W (Ta) | 80mOhm @ 3A, 10V | TSMT6 (SC-95) | MOSFET (Metal Oxide) | ±20V | 2.5V @ 1mA | |
Vishay
|
4,847
|
Price on request
4,847
|
4.9A (Ta) | 30 V | 2.5V, 10V | - | P-Channel | 80 nC @ 10 V | 2240 pF @ 15 V | Surface Mount | -55°C ~ 150°C (TJ) | 1.1W (Ta), 2.7W (Tc) | 31mOhm @ 2A, 10V | 4-Microfoot | MOSFET (Metal Oxide) | ±12V | 1.2V @ 250µA | |
Texas Instruments
|
4,846
|
Price on request
4,846
|
44A (Tc) | 100 V | 6V, 10V | - | N-Channel | 22 nC @ 10 V | 1680 pF @ 50 V | Surface Mount | -55°C ~ 150°C (TJ) | 3.2W (Ta), 63W (Tc) | 15.1mOhm @ 10A, 10V | 8-VSONP (5x6) | MOSFET (Metal Oxide) | ±20V | 3.4V @ 250µA | |
Infineon Technologies
|
4,845
|
Price on request
4,845
|
31A (Tc) | 55 V | 10V | - | P-Channel | 63 nC @ 10 V | 1200 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 110W (Tc) | 65mOhm @ 16A, 10V | IPAK (TO-251AA) | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
On Semiconductor
|
4,843
|
Price on request
4,843
|
11.5A (Ta) | 30 V | 4.5V, 10V | - | N-Channel | 30 nC @ 10 V | 1240 pF @ 15 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.5W (Ta) | 10mOhm @ 11.5A, 10V | 8-SOIC | MOSFET (Metal Oxide) | ±20V | 3V @ 1mA | |
Vishay
|
4,842
|
Price on request
4,842
|
35A (Tc) | 20 V | 4.5V, 10V | - | N-Channel | 41 nC @ 10 V | 1600 pF @ 10 V | Surface Mount | -55°C ~ 150°C (TJ) | 3.8W (Ta), 52W (Tc) | 4.8mOhm @ 20A, 10V | PowerPAK® 1212-8 | MOSFET (Metal Oxide) | ±20V | 2.5V @ 250µA | |
On Semiconductor
|
4,837
|
Price on request
4,837
|
65A (Tc) | 200 V | 10V | - | N-Channel | 200 nC @ 10 V | 7900 pF @ 25 V | Through Hole | -55°C ~ 150°C (TJ) | 310W (Tc) | 32mOhm @ 32.5A, 10V | TO-3PN | MOSFET (Metal Oxide) | ±30V | 5V @ 250µA | |
Vishay
|
4,834
|
Price on request
4,834
|
4.1A (Ta) | 30 V | 4.5V, 10V | - | P-Channel | 24 nC @ 10 V | - | Surface Mount | -55°C ~ 150°C (TJ) | 1.3W (Ta) | 42mOhm @ 5.7A, 10V | 8-SOIC | MOSFET (Metal Oxide) | ±20V | 3V @ 250µA | |
Vishay
|
4,834
|
Price on request
4,834
|
12A (Tc) | 30 V | 4.5V, 10V | - | N-Channel | 15 nC @ 10 V | 490 pF @ 15 V | Surface Mount | -55°C ~ 150°C (TJ) | 2.4W (Ta), 5W (Tc) | 20mOhm @ 8.3A, 10V | 8-SOIC | MOSFET (Metal Oxide) | ±20V | 2.2V @ 250µA | |
Texas Instruments
|
4,833
|
Price on request
4,833
|
14A (Ta), 52A (Tc) | 25 V | 4.5V, 10V | - | N-Channel | 3.8 nC @ 4.5 V | 530 pF @ 12.5 V | Surface Mount | -55°C ~ 150°C (TJ) | 3W (Ta) | 11mOhm @ 10A, 10V | 8-VSONP (5x6) | MOSFET (Metal Oxide) | +16V, -12V | 2.3V @ 250µA | |
STMicroelectronics
|
4,820
|
Price on request
4,820
|
6A (Tc) | 900 V | 10V | - | N-Channel | - | - | Through Hole | -55°C ~ 150°C (TJ) | 25W (Tc) | 1.1Ohm @ 3A, 10V | TO-220FP | MOSFET (Metal Oxide) | ±30V | 5V @ 100µA | |
On Semiconductor
|
4,818
|
Price on request
4,818
|
43A (Tc) | 100 V | 10V | - | N-Channel | 97 nC @ 10 V | 2270 pF @ 25 V | Through Hole | -55°C ~ 175°C (TJ) | 193W (Tc) | 40mOhm @ 21.5A, 10V | TO-3PN | MOSFET (Metal Oxide) | ±20V | 4V @ 250µA | |
Infineon Technologies
|
4,816
|
Price on request
4,816
|
12A (Ta), 37A (Tc) | 25 V | 4.5V, 10V | - | N-Channel | 13 nC @ 4.5 V | 1190 pF @ 13 V | Surface Mount | -55°C ~ 175°C (TJ) | 1.8W (Ta), 15W (Tc) | 5.9mOhm @ 12A, 10V | DirectFET™ Isometric S1 | MOSFET (Metal Oxide) | ±20V | 2.4V @ 25µA |