IPA60R299CP The IPA60R299CP is a 600V N-Channel MOSFET from Infineon Technologies. It features a maximum drain current of 11A and a low on-resistance of 299mOhm.
Mfr Part #:

IPA60R299CP

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IPA60R299CP is a 600V N-Channel MOSFET from Infineon Technologies. It features a maximum drain current of 11A and a low on-resistance of 299mOhm.
✓ Total Stock: 7,596 pcs
$ Price Range: $1.15 - $3.47

IPA60R299CP Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,996 pcs
3996 pcs On Request 1 On Request On Request 14+ On Request On Request
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request

IPA60R299CP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPA60R299CP Description

Short technical summary and product information.

The IPA60R299CP is a 600V N-Channel MOSFET from Infineon Technologies, part of the CoolMOS CP series. It is designed for high-voltage power conversion applications.

 

Key electrical specifications include a maximum drain current of 11A at case temperature, a maximum drain-source on-resistance of 299mOhm at 6.6A and 10V gate drive, and a maximum gate charge of 29nC at 10V. The device has a maximum power dissipation of 33W at case temperature and operates over a junction temperature range of -55°C to 150°C.

 

The IPA60R299CP is housed in a TO-220-3 Full Pack package with a PG-TO220-3-31 supplier device package, and features through-hole mounting. It is suitable for a variety of power switching circuits.

IPA60R299CP Quick Information

Product Type: MOSFET
Series: CP
Canonical Name: Infineon Technologies IPA60R299CP N-Channel MOSFET
Subcategory: N-Channel

IPA60R299CP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA60R299CP Estimated Pricing

Qty Low High
1+ $3.47 $3.47
10+ $2.26 $2.26
100+ $1.59 $1.59
500+ $1.32 $1.32
1,000+ $1.22 $1.22
2,500+ $1.15 $1.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA60R299CP Features

  • 600V drain-to-source voltage rating.
  • 11A continuous drain current at Tc.
  • Low 299mOhm on-resistance at 10V.
  • Through-hole TO-220-3 Full Pack package.
  • Wide junction temperature range -55°C to 150°C.

IPA60R299CP Applications

  • High-voltage power switching circuits.
  • Power factor correction (PFC) stages.
  • Switch-mode power supplies (SMPS).
  • Lighting and industrial power systems.

IPA60R299CP FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IPA60R299CP?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the maximum continuous drain current of the IPA60R299CP?

The maximum continuous drain current is 11A at case temperature (Tc).

What is the on-resistance of the IPA60R299CP?

The maximum drain-source on-resistance is 299mOhm at Id = 6.6A and Vgs = 10V.

What is the operating temperature range of the IPA60R299CP?

The operating junction temperature range is -55°C to 150°C.

What package does the IPA60R299CP come in?

The IPA60R299CP is available in a TO-220-3 Full Pack package with a supplier device package of PG-TO220-3-31.

Is the IPA60R299CP RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed with the manufacturer.

Home
Account

Categories