What are Transistors - Bipolar (BJT) - RF ?
Transistors - Bipolar (BJT) - RF are semiconductor devices designed for amplifying and switching high-frequency signals. They are commonly used in wireless communication systems, RF signal chains, and electronic assembly. Important specifications for selection include DC Current Gain (hFE) (Min) @ Ic, which affects amplification efficiency; Frequency, which determines operational bandwidth; and Noise Figure, which impacts signal clarity. Ensuring compatibility with existing designs and validating lifecycle status are crucial for procurement teams.
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| Part & Mfr | Total Stock | Pricing & RFQ | 1dB Compression Point (P-1dB) | ACPR | AEC Qualified | AEC-Q101 | Ambient Temperature Range | Approval Agency | Automotive Grade | Automotive Qualification | Base - Emitter Saturation Voltage | Base Current | Base Current (IB) | Base-Emitter On Voltage | Bias Resistor Ratio R2/R1 | Breakdown Voltage (Minimum @ IE = -10 A, IC = 0) | Collector - Emitter Saturation Voltage | Collector Base Feedback Capacitance | Collector Base Time Constant | Collector Capacitance | Collector Capacitance (Cc) | Collector Capacitance (Typical) | Collector Current | Collector Current (DC) | Collector Current (Maximum) | Collector Current - Continuous | Collector Current - Peak | Collector Cut-Off Current | Collector Cut-off Current (ICBO) | Collector Cutoff Current | Collector Cutoff Current (ICBO) | Collector Dissipation | Collector Efficiency | Collector Emitter Voltage (Maximum) | Collector-Base Breakdown Voltage | Collector-Base Breakdown Voltage (VCBO) | Collector-Base Capacitance | Collector-Base Capacitance (Ccb) | Collector-Base Capacitance (Ccbs) | Collector-Base Capacitance (Typical) | Collector-Base Cutoff Current (ICBO) | Collector-Base Voltage | Collector-Base Voltage (Max) | Collector-Base Voltage (Maximum) | Collector-Base Voltage (VCBO) | Collector-Emitter Breakdown Voltage | Collector-Emitter Breakdown Voltage (V(BR)CEO) | Collector-Emitter Breakdown Voltage (VCEO) | Collector-Emitter Capacitance | Collector-Emitter Capacitance (Cce) | Collector-Emitter Cutoff Current (Ices) | Collector-Emitter Leakage Current | Collector-Emitter Saturation Voltage (Vce Sat) | Collector-Emitter Voltage | Collector-Emitter Voltage (VCEO) | Collector-Emitter Voltage (VCES) | Collector-to-Base Voltage | Collector-to-Base Voltage (VCBO) | Collector-to-Emitter Voltage | Collector-to-Emitter Voltage (Maximum) | Collector-to-Substrate Voltage | Continuous Collector Current | Current | Current-Gain - Bandwidth Product | DC Current Gain | DC Current Gain (Minimum/Maximum @ VCE = 5 V, IC = 5 mA) | DC Current Gain (Minimum/Maximum @ VCE=5 V, IC=50 mA) | DC Current Gain (Minimum/Typical @ VCE=5 V, IC=10 mA) | DC Current Gain (hFE) | DC Current Gain (hFE) (Min) @ Ic, Vce | Efficiency | Emitter Capacitance | Emitter Cut-off Current | Emitter Cut-off Current (IEBO) | Emitter Cutoff Current | Emitter Cutoff Current (Iebo) | Emitter-Base Breakdown Voltage | Emitter-Base Breakdown Voltage (VEBO) | Emitter-Base Capacitance | Emitter-Base Capacitance (Ceb) | Emitter-Base Cutoff Current | Emitter-Base Cutoff Current (IEBO) | Emitter-Base Voltage | Emitter-Base Voltage (Max) | Emitter-Base Voltage (Maximum) | Emitter-Base Voltage (VEBO) | Emitter-to-Base Voltage | Emitter-to-Base Voltage (VEBO) | Feedback Capacitance | Feedback Capacitance (Cre) | Feedback Capacitance (Typical) | Forward Transfer Gain | Forward Transfer Gain (Typical @ Vce=2 V, Ic=3 mA, f=1 GHz) | Frequency | Frequency - Transition | Frequency Range | Gain | Gain-Bandwidth Product | Gain-Bandwidth Product (Typical) | Halogen Free | Industrial Grade | Input Offset Current | Input Power | Intermodulation Distortion | JEITA/JEDEC | Junction Temperature | Junction Temperature Max | Junction Temperature Range | Junction and Storage Temperature Range | Lead Count | Lead Spacing | Lead Style | Load Mismatch Tolerance | Marking Code | Maximum Power Gain | Maximum Unilateral Power Gain | Military Grade | Minimum Noise Figure | Minimum Noise Figure (NFmin) | Minimum Packing Quantity | Mounting Type | Noise Figure | Noise Figure (Typical @ f = 1 GHz) | Noise Figure (dB Typ @ f) | Number of Leads | Number of Pins | Operating Junction Temperature | Operating Junction and Storage Temperature | Operating Temperature | Operating Temperature (Ambient) | Operating Temperature (Minimum/Maximum) | Operating Temperature Range | Operating Voltage | Operating and Storage Temperature Range | Output Capacitance | Output Capacitance (Cob) | Output Capacitance (Cobo) | Output Capacitance (Typical/Maximum @ VCB = 10 V, f = 1 MHz) | Output Power | Output Power at 1 dB Gain Compression (Typical) | Output Power at 1dB Compression | Output Power at 1dB Compression (P1dB) | Output Power at 1dB Gain Compression | Output Third Order Intercept Point (IP3) | Package / Case | Package Code | Package Description | Package Dimensions | Package Type | Packing Type | Peak Collector Current | Pin Configuration | Power | Power (Output) | Power - Max | Power Dissipation | Power Dissipation (Maximum @ TC=25 °C) | Power Dissipation (Maximum) | Power Gain | Power Gain (Unspecified condition) | Pulse Width | Reverse Transfer Capacitance | Reverse Transfer Capacitance (Cre) | SVHC Present | Standard Package Qty | Standard Package Quantity | Storage Temperature | Storage Temperature (Tstg) | Storage Temperature Range | Supplier Device Package | Supplier Package | TSTG (Minimum/Maximum) | Tape & Reel | Termination Style | Thermal Resistance | Thermal Resistance (Junction to Soldering Point) | Thermal Resistance (RthJS) | Thermal Resistance - Junction to Case | Thermal Resistance Junction-Soldering Point | Thermal Resistance Junction-to-Ambient | Thermal Resistance, Junction to Soldering Point (RthJS) | Third Order Intercept Point (IP3) | Tj (Maximum) | Total Device Dissipation | Total Power Dissipation | Total Power Dissipation (Ptot) | Transducer Gain (|S21e|²) | Transistor Type | Transition Frequency | Transition Frequency (fT) | VBE matched | Voltage | gain (Nominal) | |
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