What are Transistors - FETs, MOSFETs - RF ?
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| Part & Mfr | Total Stock | Pricing & RFQ | ACPR | ACPR @ 5 MHz Offset | Approval Agency | Associated Gain | Case Operating Temperature | Case Operating Temperature Range | Case-Heatsink Thermal Resistance | Channel Temperature | Configuration | Crss | Current | Current - Test | Current Rating | Current Rating (Amps) | Derate above 25°C | Derating Factor | Drain Current | Drain Current (IDSS) | Drain Current (Maximum @ VGS = 0 V, VDS = 28 V) | Drain Current (Maximum) | Drain Efficiency | Drain Efficiency (Typical @ 2110 MHz) | Drain Efficiency (Typical @ 2140 MHz) | Drain Efficiency (Typical @ 2170 MHz) | Drain Efficiency (Typical @ 2200 MHz) | Drain Efficiency (Typical) | Drain Leakage Current (Maximum @ VDS=32 V, VGS=0 V) | Drain Leakage Current (Maximum @ VDS=65 V, VGS=0 V) | Drain Source On Voltage (Minimum/Typical/Maximum @ VGS=10 V, ID=1.4 A) | Drain-Gate Voltage | Drain-Source Breakdown Voltage | Drain-Source Current | Drain-Source Leakage Current | Drain-Source On Voltage | Drain-Source On Voltage (VDS(on)) | Drain-Source Voltage (Max) | Drain-Source Voltage (Maximum) | Drain-Source Voltage (VDS) | Drain-Source Voltage (Vdss) | Drain-source voltage | ESD - Charge Device Model | ESD Classification (CDM) | ESD Classification - Charge Device Model | ESD Classification - HBM | ESD Human Body Model | ESD Protection (Human Body Model) | ESD Protection - Charge Device Model | EVM | Efficiency | Feedback Capacitance | Feedback Capacitance (Typical) | Forward Gate Current | Forward Transconductance | Forward Transfer Admittance | Forward Transfer Admittance (|yfs|) | Forward Transfer Conductance | Frequency | Frequency Range | Gain | Gain (Typical) | Gate Current | Gate Cutoff Current (Maximum) | Gate Leakage Current | Gate Quiescent Voltage | Gate Quiescent Voltage (Carrier) | Gate Quiescent Voltage (VGS(Q)) | Gate Reverse Current | Gate Reverse Current (Maximum @ VGS = -15 Vdc) | Gate Reverse Current (Maximum @ VGS = -15 Vdc, TA = 125 °C) | Gate Reverse Current (Maximum) | Gate Source Cutoff Voltage (Maximum @ VDS = 10 Vdc, ID = 1.0 nAdc) | Gate Source Cutoff Voltage (Maximum) | Gate Source Leakage Current (Maximum @ VDS=0 V, VGS=-5 V (Carrier) | Gate Source Leakage Current (Maximum @ VDS=0 V, VGS=-5 V (Peaking) | Gate Source Voltage (Minimum/Maximum) | Gate Threshold Voltage | Gate Threshold Voltage (Minimum/Typical/Maximum @ VDS=10 V, ID=140 µA) | Gate Threshold Voltage (Vgs(th)) | Gate to Source Cut-off Voltage | Gate to Source Leak Current | Gate to Source Voltage (Absolute Maximum) | Gate-Source Breakdown Voltage | Gate-Source Breakdown Voltage (Minimum) | Gate-Source Cut-off Voltage | Gate-Source Cutoff Voltage | Gate-Source Cutoff Voltage (Minimum/Maximum @ VDS = 15 V, ID = 10 nA) | Gate-Source Forward Voltage | Gate-Source Leakage Current | Gate-Source Threshold Voltage | Gate-Source Voltage | Gate-Source Voltage (Max) | Gate-Source Voltage (Maximum) | Gate-Source Voltage (Vgs) | Gate-Source Voltage (Vgso) | Gate-Source Voltage Range | Halogen Free | IM3 | IMD(d3) | Industrial Grade | Input Capacitance | Input Capacitance (Ciss) | Input Capacitance (Typical) | Input Impedance | Input Power | Intermodulation Distortion | Junction Temperature | Junction Temperature (TJ) | Junction Temperature Range | Junction and Storage Temperature | Junction-Case Thermal Resistance | Lead Code | Lead Spacing | Lead Style | Load Impedance | Load Mismatch Test | Load Mismatch Tolerance | Load Mismatch/Ruggedness | MSL (Moisture Sensitivity Level) | Max Operating Junction Temperature | Maximum Drain-Source Voltage | Maximum Forward Gate Current | Maximum Junction Temperature | Medical Grade | Mounting Type | Noise Figure | Number of Pins | Operating Frequency | Operating Junction Temperature | Operating Junction Temperature (Minimum/Maximum) | Operating Junction Temperature Range | Operating Temperature | Operating Temperature (Minimum/Maximum) | Operating Voltage | Operating Voltage (Maximum) | Operating Voltage (Nominal) | Operating and Storage Junction Temperature | Operating and Storage Junction Temperature Range | Operation Class | Output Admittance | Output Capacitance | Output Capacitance (Typical) | Output Power | Output Power (Average) | Output Power (Typical) | Package / Case | Package Description | Package Style | Package Type | Power | Power (Output) | Power Dissipation | Power Dissipation (Maximum) | Power Gain | Power Output (Average) | RF Type | Rated Voltage | Reel Quantity | Reverse Capacitance | Reverse Transfer Capacitance | Reverse Transfer Capacitance (Crss) | Reverse Transfer Capacitance (Typical) | Ruggedness | SVHC Present | Saturated Drain Current | Standard Package Quantity | Storage Temperature | Storage Temperature (Minimum/Maximum) | Storage Temperature Range | Storage Temperature Range (Minimum/Maximum) | Supplier Device Package | Supplier Package | Tape & Reel | Tape and Reel | Technology | Termination Style | Test Current | Test Voltage | Thermal Impedance, Junction to Case | Thermal Resistance | Thermal Resistance - Junction to Case | Thermal Resistance Junction To Case (Typical @ Case Temperature 69 °C, 23 W CW) | Thermal Resistance Junction To Case (Typical @ Case Temperature 80 °C, 104 W CW) | Thermal Resistance Junction-to-Ambient | Thermal Resistance Junction-to-Case (RθJC) | Thermal Stability | Threshold Voltage | Total Device Dissipation | Total Device Dissipation Derate | Total Power Dissipation | Transconductance | Transistor Type | Type | Unit Weight | VSWR | VSWR Capability | Voltage | Voltage - Gate-Source (Vgs) | Voltage - Rated | Voltage Test | Zero Gate Voltage Drain Current | Zero Gate Voltage Drain Leakage Current | gain (Unspecified condition) | |
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