What are Transistors - JFETs ?
Transistors - JFETs are a type of field-effect transistor that control current flow using an electric field. They are commonly used in applications such as signal amplification, switching, and analog circuits. Key specifications for selection include Current Drain (Id), which affects the maximum current the transistor can handle; Drain to Source Voltage (Vdss), which determines the voltage rating; and Input Capacitance (Ciss) (Max) @ Vds, which influences the speed and frequency response. Ensuring compatibility with existing designs and validating lifecycle status are crucial for effective procurement.
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| Part & Mfr | Total Stock | Pricing & RFQ | Capacitance (Maximum) | Common-Source Forward Transconductance | Common-Source Output Conductance | Current | Current - Drain (Idss) | Current Drain (Id) | Current Drain Idss (Vds (Vgs=0)) | Cutoff Voltage | Delay Time | Derate above 25°C | Drain Current | Drain Current (IDSS) | Drain Cutoff Current | Drain Source On Resistance (Maximum @ VGS = 0 V, ID = 1 mA) | Drain to Source Voltage (Vdss) | Drain-Gate Voltage | Drain-Source Breakdown Voltage | Drain-Source On Voltage | Drain-Source On-Resistance | Drain-source voltage | Drain-to-Source Voltage | FET Type | Forward Gate Current | Forward Transconductance | Forward Transconductance (gfs) | Forward Transfer Admittance | Forward Transfer Admittance (Minimum @ VDS = 20 V, f = 1.0 kHz) | Forward Transfer Admittance (Minimum/Maximum @ VGS = 0, VDS = 15 Vdc, f = 1.0 kHz) | Forward Transfer Admittance (|yfs|) | Gate Current | Gate Current (Ig) | Gate Cutoff Current | Gate Cutoff Current (Igss) | Gate Leakage Current | Gate Reverse Current | Gate Reverse Current (Igss) | Gate Reverse Current (Maximum @ VGS = - 15 V, VDS = 0) | Gate Reverse Current (Maximum @ VGS = -15 V, VDS = 0, TA = 100 °C) | Gate Reverse Current (Maximum @ VGS = 15 Vdc, VDS = 0, TA = 100 °C) | Gate Reverse Current (Maximum @ VGS = 20 V, VDS = 0 V) | Gate Source Cutoff Voltage (Maximum @ VDS = 15 V, ID = 10 nA) | Gate Source Cutoff Voltage (Maximum @ VDS = 15 Vdc, ID = 10 nAdc) | Gate Source Cutoff Voltage (Maximum) | Gate Source Cutoff Voltage (Minimum/Maximum) | Gate Source Cutoff Voltage (Nominal) | Gate to Drain Breakdown Voltage (V(BR)GDS) | Gate to Drain Voltage (VGDS) | Gate to Drain Voltage (Vgdo) | Gate to Source Breakdown Voltage | Gate-Source Breakdown Voltage | Gate-Source Breakdown Voltage (Minimum) | Gate-Source Breakdown Voltage (V(BR)GSS) | Gate-Source Cut-off Voltage | Gate-Source Cutoff Voltage | Gate-Source Cutoff Voltage (VGS(OFF)) | Gate-Source Forward Voltage | Gate-Source Voltage | Gate-Source Voltage (Maximum) | Gate-Source Voltage (Vgs) | Gate-to-Drain Breakdown Voltage | Gate-to-Source Leakage Current | Halogen Free | Industrial Grade | Input Capacitance | Input Capacitance (Ciss) | Input Capacitance (Ciss) (Max) @ Vds | Junction Temperature | Junction Temperature Range | Junction and Storage Temperature | Junction and Storage Temperature Range | Lead Style | Medical Grade | Military Grade | Mounting Type | Noise Figure | Noise Figure (NF) | Off-State Drain Current | Operating Temperature | Operating Voltage (Maximum) | Operating and Storage Junction Temperature Range | Output Admittance | Output Admittance (|Yos|) | Output Conductance | Output Conductance (gos) | Package / Case | Power | Power - Max | Power Dissipation | Power Dissipation (Maximum) | Power Dissipation (Maximum) @ TA=25°C | Resistance | Resistance - RDS(On) | Reverse Gate Source Voltage | Reverse Transfer Capacitance | Reverse Transfer Capacitance (Crss) | Rise Time | Saturation Drain Current | Standard Package Qty | Standard Package Quantity | Static Drain Source On Resistance (Maximum @ ID = 1.0 mAdc, VGS = 0) | Static Drain-Source On-Resistance | Storage Temperature | Storage Temperature Range | Supplier Device Package | Supplier Package | Tape & Reel | Termination Style | Thermal Resistance - Junction to Case | Thermal Resistance Junction-to-Ambient | Total Device Dissipation | Total Power Dissipation | Turn Off Time | Turn On Time | Voltage | Voltage - Breakdown (V(BR)GSS) | Voltage - Cutoff | Voltage Breakdown | Voltage Cutoff Vgs Off (Id) | Zero Gate Voltage Drain Current | Zero Gate Voltage Drain Current (Minimum/Typical/Maximum @ VDS = 15 Vdc, VGS = 0) | Zero-Gate-Voltage Drain Current (IDSS) | capacitance (Maximum @ VDS = 0, VGS = 0, f = 1.0 MHz) | capacitance (Maximum @ VDS = 0, VGS = −10 V, f = 1.0 MHz) | current (@ 15 V) | |
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