| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,820 pcs
|
5820 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,874 pcs
|
1874 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6 pcs
|
6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTB25P06T4G is a P-Channel MOSFET designed for low voltage, high-speed switching applications. It offers a drain-to-source voltage of -60V and a continuous drain current of 27.5A at 25°C ambient temperature. The device has a maximum power dissipation of 120W and an operating temperature range of -55°C to 175°C.
Key electrical characteristics include a static drain-source on-state resistance of 82mOhm maximum at 25A and 10V, and an input capacitance of 1680pF at 25V. The gate charge is a maximum of 50nC at 10V.
This MOSFET is housed in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, suitable for surface mounting. It is designed to withstand high energy in avalanche and commutation modes, making it suitable for applications such as PWM motor controls, power supplies, converters, and bridge circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-60 V
27.5 A
120 W
-55°C ~ 175°C
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS3 Compliant