CSD17577Q3A N-channel 30V NexFET power MOSFET with 35A drain current and 4.8mΩ max on-resistance at 10V gate drive. Surface-mount 8-PowerVDFN package.
Mfr Part #:

CSD17577Q3A

Available from 3 distributors
Mfr Name: Texas Instruments
Texas Instruments
N-channel 30V NexFET power MOSFET with 35A drain current and 4.8mΩ max on-resistance at 10V gate drive. Surface-mount 8-PowerVDFN package.
✓ Total Stock: 8,479 pcs
$ Price Range: $0.24 - $1.09

CSD17577Q3A Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request 22+ On Request On Request
Non-Authorised Inventory information
2,645 pcs
2645 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
834 pcs
834 pcs On Request 1 On Request On Request On Request On Request On Request

CSD17577Q3A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD17577Q3A Description

Short technical summary and product information.

CSD17577Q3A is a 30V N-channel NexFET power MOSFET from Texas Instruments. It features a maximum drain-source on-resistance of 4.8mΩ at VGS=10V and 6.4mΩ at VGS=4.5V. The device supports drain current up to 35A (package-limited) and 83A silicon-limited at TC=25°C. Gate threshold voltage is typical 1.4V and maximum 1.8V at 250µA, enabling logic-level drive.

 

With a gate charge of 13nC typical (35nC maximum) and input capacitance of 2310pF maximum at 15V, the MOSFET is optimized for fast switching in power conversion applications. The device is avalanche rated and operates over a junction temperature range of -55°C to 150°C.

 

The MOSFET comes in a compact 8-PowerVDFN surface-mount package (8-VSONP, 3.3mm x 3.3mm) with low thermal resistance. It is offered as Pb-free and halogen-free, and the manufacturer lists it as RoHS compliant. This package is suitable for space-constrained designs requiring high power density.

CSD17577Q3A Quick Information

Product Type: Power MOSFET
Canonical Name: 30V N-Channel NexFET Power MOSFET
Subcategory: Single N-Channel MOSFET

CSD17577Q3A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb Free

CSD17577Q3A Estimated Pricing

Qty Low High
1+ $1.09 $1.09
10+ $0.68 $0.68
50+ $0.50 $0.50
100+ $0.44 $0.44
500+ $0.34 $0.34
2,500+ $0.27 $0.27
7,500+ $0.24 $0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD17577Q3A Features

  • 30V drain-source voltage rating.
  • 4.8mΩ max on-resistance at 10V.
  • Logic-level gate drive supported.
  • Surface-mount 3.3mm x 3.3mm package.
  • Operating temperature from -55°C to 150°C.

CSD17577Q3A Applications

  • Designed for power conversion applications.
  • Suitable for low-voltage switching circuits.
  • Logic-level gate drive simplifies control interface.
  • Avalanche rated for robust operation.

CSD17577Q3A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

30 V.

What is the operating temperature range?

-55°C to 150°C (junction).

What package is this MOSFET available in?

8-PowerVDFN surface-mount package, also designated 8-VSONP (3.3mm x 3.3mm).

Is the device RoHS compliant?

The manufacturer page lists it as RoHS compliant, Pb-free, and halogen-free.

What is the maximum on-resistance at 10V gate drive?

4.8 mΩ at VGS=10V, Id=16A.

What is the drain current rating?

35A package-limited; silicon-limited drain current is 83A at TC=25°C.

What is the gate threshold voltage?

Typical 1.4V, maximum 1.8V at Id=250µA.

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