| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,550 pcs
|
7550 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The BUZ21 is an N-Channel enhancement-mode MOSFET manufactured by Harris Semiconductor. It is designed for medium-power switching and amplification applications.
Key electrical specifications include a drain-source breakdown voltage of 100V and a continuous drain current rating of 21A at case temperature. The device has a maximum on-resistance of 85mOhm when driven with 10V gate-to-source voltage at 13A drain current. The maximum gate threshold voltage is 4V at 1mA drain current. Input capacitance is 1300pF at 25V drain-source voltage.
The BUZ21 uses standard MOSFET (Metal Oxide) technology and is housed in a TO-220-3 through-hole package with a TO-220AB supplier device package. This package is suitable for PCB mounting and allows for heatsink attachment for thermal management.
| Qty | Low | High |
|---|---|---|
| 179+ | $1.68 | $1.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The continuous drain current is 21A at case temperature.
The maximum on-resistance is 85mOhm at Vgs=10V and Id=13A.
The BUZ21 is available in a TO-220-3 through-hole package with TO-220AB supplier device package.
The BUZ21 is listed as RoHS3 Compliant, but this status is unverified and should be confirmed with the manufacturer.