SI7111EDN-T1-GE3 The Vishay Dale SI7111EDN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 60A continuous drain current. It features a low Rds(on) of 8.55mOhm at 4.5V Vgs.
Mfr Part #:

SI7111EDN-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI7111EDN-T1-GE3 is a P-Channel MOSFET with a 30V drain-source voltage and 60A continuous drain current. It features a low Rds(on) of 8.55mOhm at 4.5V Vgs.
✓ Total Stock: 7,608 pcs
$ Price Range: $0.99

SI7111EDN-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,543 pcs
7543 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
65 pcs
65 pcs On Request 1 On Request On Request On Request On Request On Request

SI7111EDN-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI7111EDN-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI7111EDN-T1-GE3 is a P-Channel MOSFET designed for power switching applications. It offers a 30V drain-source voltage and a continuous drain current rating of 60A at 25°C case temperature.

 

Key electrical characteristics include a maximum Rds(on) of 8.55mOhm at 15A and 4.5V Vgs, and a gate threshold voltage of 1.6V at 250µA. The MOSFET also features a typical gate charge of 30.5 nC and an input capacitance of 5860 pF.

 

This device is housed in a PowerPAK 1212-8 surface-mount package, suitable for applications requiring efficient thermal performance. The operating temperature range is -55°C to 150°C (TJ). It is designed for applications such as battery switches, adapter and charger switches, and load switches.

 

The MOSFET is tested for Rg and UIS, and provides typical ESD protection of 4600V HBM. It is RoHS3 compliant and has an MSL rating of 1.

SI7111EDN-T1-GE3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay Dale Si7111EDN-T1-GE3 P-Channel 30V 60A PowerPAK MOSFET
Subcategory: P-Channel

SI7111EDN-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI7111EDN-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI7111EDN-T1-GE3 Features

  • P-Channel 30V Power MOSFET
  • 60A continuous drain current
  • Low Rds(on) of 8.55mOhm
  • PowerPAK 1212-8 surface mount package
  • 4600V HBM ESD protection

SI7111EDN-T1-GE3 Applications

  • Battery switch applications
  • Adapter and charger switches
  • Load switch functionality
  • Mobile device battery management

SI7111EDN-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

-30 V

What is the continuous drain current rating?

60 A at Tc=25°C, 17.4 A at TA=25°C

What is the on-resistance?

8.55 mOhm at Vgs=-4.5V, Id=15A; 16 mOhm at Vgs=-2.5V

What is the operating temperature range?

-55°C to 150°C (junction)

What package does this MOSFET come in?

PowerPAK 1212-8 surface mount package

What is the gate threshold voltage?

1.6V at 250µA

What is the input capacitance?

5860 pF at Vds=15V

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