| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7,600 pcs
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7600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics STP28N60DM2 is a high-voltage N-channel Power MOSFET belonging to the MDmesh™ DM2 fast recovery diode series. It is designed for demanding high-efficiency converters and is suitable for bridge topologies and ZVS phase-shift converters.
Key electrical characteristics include a 600V drain-to-source voltage (Vdss), a maximum on-resistance (Rds On) of 160mOhm at 10.5A and 10V gate-source voltage, and a continuous drain current of 21A at 25°C case temperature. The device also features a low on-resistance, extremely low gate charge, and input capacitance, along with 100% avalanche testing and high dv/dt ruggedness.
Packaged in a standard TO-220 configuration, the STP28N60DM2 is designed for through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ), and it has a maximum power dissipation of 170W at 25°C case temperature.
This MOSFET incorporates a fast-recovery body diode and is Zener-protected, enhancing its reliability in switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) for the STP28N60DM2 is 600 V.
The continuous drain current for the STP28N60DM2 is 21 A at a case temperature of 25°C.
The maximum on-resistance (Rds On) for the STP28N60DM2 is 160 mOhm when measured at 10.5A drain current and 10V gate-source voltage.
The STP28N60DM2 is available in a TO-220-3 package.
The operating junction temperature range for the STP28N60DM2 is -55°C to 150°C.
Yes, the STP28N60DM2 features a fast-recovery body diode.