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STD96N3LLH6 N-Channel MOSFET, 30V maximum drain-to-source voltage, 80A continuous drain current. Features low on-resistance of 4.2mOhm at 40A, 10V.
Mfr Part #:

STD96N3LLH6

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
N-Channel MOSFET, 30V maximum drain-to-source voltage, 80A continuous drain current. Features low on-resistance of 4.2mOhm at 40A, 10V.
✓ Total Stock: 7,500 pcs
$ Price Range: $2.56

STD96N3LLH6 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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Non-Authorised Inventory information
7,500 pcs
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7500 pcs On Request 1 On Request On Request On Request On Request On Request
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STD96N3LLH6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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STD96N3LLH6 Description

Short technical summary and product information.

The STD96N3LLH6 is an N-channel MOSFET from STMicroelectronics designed for power management applications. It features a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current of 80A (at Tc). The device offers a low on-resistance (Rds(on)) of 4.2mOhm at 40A drain current and 10V gate-to-source voltage, enabling efficient power switching.

 

Electrical characteristics include a maximum gate charge of 20nC at 4.5V Vgs, and an input capacitance (Ciss) of 2200pF at 25V Vds. The gate threshold voltage (Vgs(th)) is not specified in the provided data. The power dissipation is rated at 70W at Tc.

 

The MOSFET is housed in a DPAK (TO-252) surface-mount package, suitable for automated assembly. It is commonly used in DC-DC converters, power management circuits, and motor control applications where high efficiency and compact size are required.

STD96N3LLH6 Quick Information

Product Type: MOSFET
Canonical Name: STD96N3LLH6 N-Channel MOSFET, 30V Vdss, 80A Drain Current
Subcategory: Single N-Channel MOSFET

STD96N3LLH6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD96N3LLH6 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD96N3LLH6 Features

  • Rated for 30V drain-to-source voltage.
  • Supports 80A continuous drain current.
  • Low on-resistance of 4.2 milliohms.
  • Gate charge of 20 nC at 4.5V.
  • Input capacitance of 2200 pF at 25V.

STD96N3LLH6 Applications

  • Used in DC-DC converter circuits.
  • Ideal for power management systems.
  • Suitable for motor control applications.
  • Can be used in battery protection.

STD96N3LLH6 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the STD96N3LLH6?

The maximum drain-to-source voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 80A at Tc.

What is the on-resistance of the STD96N3LLH6?

The typical on-resistance is 4.2 milliohms at 40A drain current and 10V gate voltage.

What is the gate charge of the MOSFET?

The maximum gate charge is 20 nC at 4.5V gate-to-source voltage.

What is the input capacitance of the device?

The maximum input capacitance is 2200 pF at 25V drain-to-source voltage.

What is the maximum power dissipation?

The maximum power dissipation is 70W at Tc.

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