| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,583 pcs
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4583 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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124 pcs
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124 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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61 pcs
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61 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Fall Time (Typ) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The AO3415 is a P-Channel Enhancement Mode MOSFET designed for low-voltage load switching and power management applications. With a drain-source voltage rating of 20V and continuous drain current of 4A, it provides efficient switching performance in a compact SOT-23-3 surface mount package. The device features an ultra-low on-resistance of 30 mOhm typical at Vgs=-4.5V, minimizing conduction losses. Gate threshold voltage ranges from -0.3V to -1.2V, allowing drive from low-voltage logic. The MOSFET is suitable for battery protection, load switching, and portable electronics. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 1.5W (Ta) and 1.2W (t≤10s). The SOT-23-3 package enables space-efficient designs.
The drain-source voltage rating is 20V (minimum breakdown voltage).
Continuous drain current is 4A at Ta=25°C.
It comes in a SOT-23-3 surface mount package.
Operating junction temperature range is -55°C to 150°C.
Typical on-resistance is 30 mOhm at Vgs=-4.5V and Id=-4A.
The part is marked as RoHS3 compliant, but this is unverified from source documents.