AO3415 The AO3415 is a P-Channel Enhancement Mode MOSFET from Alpha & Omega Semiconductor. It features a drain-source voltage of 20V, continuous drain current of 4A, and low on-resistance of 30 mOhm typical.
Mfr Part #:

AO3415

Available from 4 distributors
Mfr Name: Alpha&Omega Semicondu Ctor
Alpha&Omega Semicondu Ctor
The AO3415 is a P-Channel Enhancement Mode MOSFET from Alpha & Omega Semiconductor. It features a drain-source voltage of 20V, continuous drain current of 4A, and low on-resistance of 30 mOhm typical.
✓ Total Stock: 7,768 pcs

AO3415 Available from 4 distributors

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✓ Non-Authorised

AO3415 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Fall Time (Typ)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Rise Time (Typ)
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

AO3415 Description

Short technical summary and product information.

The AO3415 is a P-Channel Enhancement Mode MOSFET designed for low-voltage load switching and power management applications. With a drain-source voltage rating of 20V and continuous drain current of 4A, it provides efficient switching performance in a compact SOT-23-3 surface mount package. The device features an ultra-low on-resistance of 30 mOhm typical at Vgs=-4.5V, minimizing conduction losses. Gate threshold voltage ranges from -0.3V to -1.2V, allowing drive from low-voltage logic. The MOSFET is suitable for battery protection, load switching, and portable electronics. It operates over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 1.5W (Ta) and 1.2W (t≤10s). The SOT-23-3 package enables space-efficient designs.

AO3415 Quick Information

Product Type: MOSFET
Canonical Name: AO3415 P-Channel Enhancement Mode MOSFET
Subcategory: P-Channel MOSFET

AO3415 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

AO3415 Features

  • P-Channel enhancement mode MOSFET.
  • Low on-resistance of 30 mOhm.
  • Rated for 20V drain-source voltage.
  • Continuous drain current up to 4A.
  • Surface mount SOT-23-3 package.

AO3415 Applications

  • Load switching in portable devices.
  • Battery protection circuits.
  • Power management in low-voltage systems.
  • Small signal switch applications.

AO3415 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the AO3415?

The drain-source voltage rating is 20V (minimum breakdown voltage).

What is the continuous drain current rating?

Continuous drain current is 4A at Ta=25°C.

What is the package type of the AO3415?

It comes in a SOT-23-3 surface mount package.

What is the operating temperature range?

Operating junction temperature range is -55°C to 150°C.

What is the typical on-resistance of the AO3415?

Typical on-resistance is 30 mOhm at Vgs=-4.5V and Id=-4A.

Is the AO3415 RoHS compliant?

The part is marked as RoHS3 compliant, but this is unverified from source documents.

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