| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,591 pcs
|
7591 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDD86326 is an N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for a maximum drain-source voltage of 80V and can handle continuous drain currents of 8A at ambient temperature (Ta) and 37A at case temperature (Tc). The device features a low on-resistance of 23 mOhm maximum at 8A and 10V gate drive, ensuring efficient power switching.
With a typical gate charge of 19 nC at 10V and input capacitance of 1035 pF at 50V, the FDD86326 offers fast switching performance suitable for high-frequency applications. The operating junction temperature range is -55°C to 150°C, allowing use in harsh environments.
This MOSFET is housed in a surface-mount DPAK package (TO-252-3, SC-63) with a supplier device package of TO-252AA. The mounting type is surface mount, making it compatible with standard PCB assembly processes. The device is rated for ROHS3 compliance, though this is unverified, and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1+ | $2.58 | $2.58 |
| 10+ | $1.83 | $1.83 |
| 2,500+ | $1.83 | $1.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80 V.
TO-252-3, DPAK (2 Leads + Tab), SC-63; supplier device package TO-252AA.
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified).
8 A at 25°C ambient temperature (Ta) and 37 A at case temperature (Tc).
23 mOhm at 8A drain current and 10V gate-source voltage.
19 nC at 10V gate-source voltage.