Mfr Part #:

IPP60R120P7XKSA1

N-Channel MOSFET from Infineon's CoolMOS P7 series, rated for 600V drain-source voltage and 26A continuous drain current. Features low on-resistance of 120mOhm and is housed in a TO-220-3 through-hole package.

✓ Total Stock: 7,520 pcs

$ Price Range: $1.63 - $4.43

IPP60R120P7XKSA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,520 pcs On Request	7520 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPP60R120P7XKSA1 Description

Short technical summary and product information.

The IPP60R120P7XKSA1 is an N-Channel power MOSFET from Infineon Technologies, part of the CoolMOS P7 series. It is designed for high-voltage switching applications with a maximum drain-source voltage of 600V (650V at Tj,max) and a continuous drain current of 26A at case temperature. The device features a low typical on-resistance of 120mOhm at 10V gate drive, enabling efficient power conversion.

This MOSFET utilizes superjunction technology to achieve low switching and conduction losses, making it suitable for both hard and soft switching topologies such as PFC and LLC converters. It offers excellent ESD robustness (>2kV HBM) and rugged body diode for hard commutation. The gate charge is 36nC typical, and input capacitance is 1544pF at 400V drain-source.

The device is packaged in a standard TO-220-3 through-hole package (PG-TO220-3), suitable for easy mounting on heatsinks. Operating temperature range is -55°C to 150°C junction temperature. It is RoHS3 compliant and REACH unaffected, with MSL level 1 (unlimited).

IPP60R120P7XKSA1 Quick Information

Product Type: Power MOSFET

Series: P7

Canonical Name: Infineon Technologies IPP60R120P7XKSA1 N-Channel MOSFET, 600V, 26A, TO-220-3

Subcategory: N-Channel Power MOSFET

IPP60R120P7XKSA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPP60R120P7XKSA1 Estimated Pricing

Qty	Low	High
1+	$4.43	$4.43
10+	$2.27	$2.27
100+	$2.06	$2.06
500+	$1.68	$1.68
1,000+	$1.63	$1.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP60R120P7XKSA1 Features

N-Channel MOSFET with 600V drain-source voltage.
Continuous drain current rating of 26A.
Low on-resistance of 120mOhm typical.
Superjunction CoolMOS P7 technology.
TO-220-3 through-hole package.

IPP60R120P7XKSA1 Applications

Suitable for PFC stages in power supplies.
Used in hard switching PWM converters.
Ideal for resonant LLC converters.
Applicable in server and telecom power systems.
Used in lighting and adapter applications.

IPP60R120P7XKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating?

600V (maximum 650V at Tj,max).

What is the package type?

TO-220-3 (PG-TO220-3) through-hole package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the device RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the continuous drain current?

26A at case temperature.

What is the on-resistance?

120mOhm maximum at Vgs=10V, Id=8.2A.

What is the gate charge?

36nC typical at Vgs=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	26 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Industrial Grade	Yes
Input Capacitance (Ciss) (Max) @ Vds	1544 pF
Mounting Type	Through Hole
Operating Temperature	-55°C to 150°C
Power Dissipation (Max)	95 W
Rds On (Max) @ Id, Vgs	120 mOhm
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	PG-TO220-3
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V