| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,235 pcs
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3235 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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360 pcs
|
360 pcs | On Request | 1 | On Request | On Request | 0725 | On Request | On Request |
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The IRF7401TRPBF is an N-Channel enhancement mode MOSFET from Infineon Technologies, designed for low-voltage switching applications. It features a drain-source voltage of 20V and a continuous drain current of 8.7A at ambient temperature.
Key electrical characteristics include a maximum on-resistance of 22mOhm at 4.1A drain current and 4.5V gate drive, with a gate threshold voltage of 700mV. The device has a gate charge of 48nC and input capacitance of 1600pF, enabling efficient switching.
The MOSFET is housed in an 8-SOIC surface mount package (8-SO supplier package) and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.5W at ambient temperature.
Suitable for load switching, DC-DC converters, and power management circuits where low voltage and moderate current are required. The device supports drive voltages of 2.7V and 4.5V for logic-level compatibility.
20V.
8-SOIC (0.154", 3.90mm Width) surface mount package.
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
8.7A at ambient temperature.
22mOhm maximum at 4.1A and 4.5V gate drive.
700mV at 250µA drain current.