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FQU7N10LTU N-Channel MOSFET rated for 100V drain-source voltage and 5.8A continuous drain current. Features low gate charge and fast switching.
Mfr Part #:

FQU7N10LTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 100V drain-source voltage and 5.8A continuous drain current. Features low gate charge and fast switching.
✓ Total Stock: 7,538 pcs

FQU7N10LTU Available from 1 distributor

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✓ Non-Authorised
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Hybrid Electronics ✓
Non-Authorised Inventory information
7,538 pcs
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7538 pcs On Request 1 On Request On Request 2000 On Request On Request
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FQU7N10LTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQU7N10LTU Description

Short technical summary and product information.

The FQU7N10LTU is an N-Channel enhancement mode power MOSFET from onsemi's QFET family, originally developed by Fairchild Semiconductor. It uses planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance.

 

Key electrical specifications include a drain-source voltage of 100V, continuous drain current of 5.8A at 25°C (3.67A at 100°C), and a maximum drain-source on-resistance of 350mΩ at Vgs=10V and Id=2.9A. The device is logic-level compatible, requiring only 5V gate drive for full enhancement. Gate charge is typically 4.6nC, enabling fast switching.

 

The part is housed in a TO-251-3 (IPak) through-hole package with short leads. It features a maximum power dissipation of 25W at case temperature 25°C, and operates over a junction temperature range of -55°C to +150°C. The MOSFET is 100% avalanche tested and offers improved dv/dt capability.

FQU7N10LTU Quick Information

Product Type: MOSFET
Series: FQU7N10L
Canonical Name: FQU7N10LTU
Subcategory: N-Channel Logic Level MOSFET

FQU7N10LTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQU7N10LTU Features

  • 5.8A continuous drain current at 25°C.
  • 100V drain-source breakdown voltage.
  • Low gate charge of 4.6 nC typical.
  • Logic-level gate drive operation possible.
  • 100% avalanche tested for ruggedness.

FQU7N10LTU Applications

  • Used in high efficiency DC/DC converters.
  • Suitable for DC motor control circuits.
  • Ideal for low voltage power management.
  • Works in battery powered equipment.
  • Applicable for load switching and relays.

FQU7N10LTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQU7N10LTU?

100V

What is the continuous drain current at 25°C?

5.8A

What is the package type?

TO-251-3 Short Leads, IPak, TO-251AA

What is the operating temperature range?

-55°C to +150°C (junction temperature)

Is the device RoHS compliant?

RoHS3 Compliant (unverified)

What is the typical gate charge?

4.6 nC

What is the maximum on-resistance at Vgs=10V?

350mΩ at Id=2.9A, Vgs=10V

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