| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 320 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Capacitance | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Thermal Resistance | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
The STP11NM60FD is an N-channel Power MOSFET from STMicroelectronics, part of the FDmesh™ family. It offers a high drain-source voltage of 600V and a continuous drain current of 11A at 25°C case temperature. The MOSFET features a low on-resistance of 450mOhm maximum at 5.5A and 10V gate-source voltage, along with a gate charge of 40nC maximum.
Designed for switching applications, this MOSFET has a maximum power dissipation of 160W at 25°C case temperature. It is built using MOSFET (Metal Oxide) technology and has a gate-source voltage rating of ±30V. The threshold voltage is 5V maximum at 250µA.
The STP11NM60FD is available in a TO-220-3 package and is suitable for through-hole mounting. Its thermal resistance junction-to-case is 0.78°C/W. The component is RoHS3 compliant, has an MSL of 1 Unlimited, and REACH Unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600V.
11A at case temperature 25°C.
450mOhm maximum at 5.5A and 10V gate drive.
TO-220-3 through-hole.
160W at case temperature 25°C.
40nC at 10V gate voltage.
900pF at 25V drain-source voltage.