STP11NM60FD The STP11NM60FD is an N-channel MOSFET from STMicroelectronics with a 600V drain-source voltage and 11A continuous current rating. It is supplied in a TO-220 package.
Mfr Part #:

STP11NM60FD

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STP11NM60FD is an N-channel MOSFET from STMicroelectronics with a 600V drain-source voltage and 11A continuous current rating. It is supplied in a TO-220 package.
✓ Total Stock: 7,520 pcs
$ Price Range: $2.56

STP11NM60FD Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,020 pcs
3020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
500 pcs
500 pcs On Request 1 On Request On Request 320 On Request On Request

STP11NM60FD Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Capacitance
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Thermal Resistance
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage

STP11NM60FD Description

Short technical summary and product information.

The STP11NM60FD is an N-channel Power MOSFET from STMicroelectronics, part of the FDmesh™ family. It offers a high drain-source voltage of 600V and a continuous drain current of 11A at 25°C case temperature. The MOSFET features a low on-resistance of 450mOhm maximum at 5.5A and 10V gate-source voltage, along with a gate charge of 40nC maximum.

 

Designed for switching applications, this MOSFET has a maximum power dissipation of 160W at 25°C case temperature. It is built using MOSFET (Metal Oxide) technology and has a gate-source voltage rating of ±30V. The threshold voltage is 5V maximum at 250µA.

 

The STP11NM60FD is available in a TO-220-3 package and is suitable for through-hole mounting. Its thermal resistance junction-to-case is 0.78°C/W. The component is RoHS3 compliant, has an MSL of 1 Unlimited, and REACH Unaffected status.

STP11NM60FD Quick Information

Product Type: MOSFET
Canonical Name: STP11NM60FD N-Channel 600V 11A MOSFET
Subcategory: N-Channel

STP11NM60FD Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STP11NM60FD Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STP11NM60FD Features

  • 600V drain-source voltage rating.
  • 11A continuous drain current.
  • Low 450mOhm maximum on-resistance.
  • TO-220 package for through-hole mounting.
  • FDmesh™ Power MOSFET with fast diode.

STP11NM60FD Applications

  • Used in power supply circuits.
  • Suitable for motor control applications.
  • Ideal for high-voltage switching.
  • Common in inverter designs.
  • Applicable in lighting ballasts.

STP11NM60FD FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

600V.

What is the continuous drain current rating?

11A at case temperature 25°C.

What is the on-resistance?

450mOhm maximum at 5.5A and 10V gate drive.

What is the package type?

TO-220-3 through-hole.

What is the maximum power dissipation?

160W at case temperature 25°C.

What is the gate charge?

40nC at 10V gate voltage.

What is the input capacitance?

900pF at 25V drain-source voltage.

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