BSC032N03S N-Channel MOSFET rated for 30V drain-source voltage and 50A continuous drain current. Features very low on-resistance of 3.2mOhm at 10V gate drive.
Mfr Part #:

BSC032N03S

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET rated for 30V drain-source voltage and 50A continuous drain current. Features very low on-resistance of 3.2mOhm at 10V gate drive.
✓ Total Stock: 7,567 pcs
$ Price Range: $0.68

BSC032N03S Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,567 pcs
7567 pcs On Request 1 On Request On Request 08+ On Request On Request

BSC032N03S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

BSC032N03S Description

Short technical summary and product information.

The BSC032N03S is an N-Channel enhancement mode power MOSFET from Infineon Technologies' OptiMOS 2 family. It is designed for fast switching applications such as notebook DC/DC converters and general purpose SMPS.

 

Key electrical specifications include a drain-source breakdown voltage of 30V, continuous drain current of 50A at case temperature 25°C, and a maximum drain-source on-state resistance of 3.2mOhm at 10V gate drive. The device is logic level capable with a gate threshold voltage of 2V maximum. It offers excellent switching performance with typical gate charge of 39nC at 5V and fast switching times.

 

The MOSFET is housed in a surface mount PG-TDSON-8-1 (8-PowerTDFN) package. It is avalanche rated with a single pulse avalanche energy of 550mJ and features superior thermal resistance of 1.6 K/W junction-to-case.

BSC032N03S Quick Information

Product Type: MOSFET
Canonical Name: BSC032N03S OptiMOS 2 Power-Transistor
Subcategory: Single MOSFET

BSC032N03S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSC032N03S Estimated Pricing

Qty Low High
5,000+ $0.68 $0.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC032N03S Features

  • N-Channel logic level power MOSFET.
  • Very low on-resistance of 3.2mOhm.
  • Fast switching for SMPS applications.
  • Avalanche rated with 550mJ capability.
  • Superior thermal resistance package.

BSC032N03S Applications

  • Notebook DC/DC converter circuits.
  • General purpose switched mode power supplies.
  • High efficiency load switching applications.
  • Low voltage power management systems.

BSC032N03S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the BSC032N03S?

The maximum drain-source breakdown voltage is 30V.

What is the continuous drain current rating of the BSC032N03S?

The continuous drain current is 50A at Tc=25°C and 23A at Ta=25°C.

What is the on-resistance of the BSC032N03S at 10V gate drive?

The maximum on-resistance is 3.2mOhm at VGS=10V and ID=50A.

What package is the BSC032N03S available in?

The BSC032N03S is available in a surface mount PG-TDSON-8-1 (8-PowerTDFN) package.

What is the operating temperature range for the BSC032N03S?

The operating junction temperature range is -55°C to 150°C.

Is the BSC032N03S RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed.

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