| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,567 pcs
|
7567 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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The BSC032N03S is an N-Channel enhancement mode power MOSFET from Infineon Technologies' OptiMOS 2 family. It is designed for fast switching applications such as notebook DC/DC converters and general purpose SMPS.
Key electrical specifications include a drain-source breakdown voltage of 30V, continuous drain current of 50A at case temperature 25°C, and a maximum drain-source on-state resistance of 3.2mOhm at 10V gate drive. The device is logic level capable with a gate threshold voltage of 2V maximum. It offers excellent switching performance with typical gate charge of 39nC at 5V and fast switching times.
The MOSFET is housed in a surface mount PG-TDSON-8-1 (8-PowerTDFN) package. It is avalanche rated with a single pulse avalanche energy of 550mJ and features superior thermal resistance of 1.6 K/W junction-to-case.
| Qty | Low | High |
|---|---|---|
| 5,000+ | $0.68 | $0.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage is 30V.
The continuous drain current is 50A at Tc=25°C and 23A at Ta=25°C.
The maximum on-resistance is 3.2mOhm at VGS=10V and ID=50A.
The BSC032N03S is available in a surface mount PG-TDSON-8-1 (8-PowerTDFN) package.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and should be confirmed.