| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,425 pcs
|
6425 pcs | On Request | 1 | On Request | On Request | 1019+ | On Request | On Request | |
|
1,081 pcs
|
1081 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The STMicroelectronics STW42N65M5 is a power MOSFET featuring an N-Channel configuration. It is designed to handle a maximum drain-source voltage (Vdss) of 650V and can sustain a continuous current of 33A at the case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 79mOhm at 16.5A and 10V gate drive, and a maximum gate charge (Qg) of 100 nC. The input capacitance (Ciss) is rated at 4650 pF at 100V.
This MOSFET operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 190W (Tc). It is housed in a TO-247-3 package and utilizes through-hole mounting.
The device is specified with a gate threshold voltage (Vgs(th)) of 5V at 250µA and a maximum gate-source voltage (Vgs) of ±25V.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 650V.
The continuous current rating is 33A at the case temperature.
The Rds On (Max) is 79mOhm at 16.5A and 10V gate drive.
The STW42N65M5 is supplied in a TO-247-3 package.
This MOSFET is designed for through-hole mounting.
The maximum operating junction temperature (TJ) is 150°C.