| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,962 pcs
|
3962 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,774 pcs
|
2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFBG30PBF is an N-Channel MOSFET manufactured by Vishay Dale. It features a drain-to-source voltage rating of 1000V and a continuous drain current of 3.1A at 25°C case temperature. The device has a maximum on-resistance of 5 ohms at a drain current of 1.9A and gate-source voltage of 10V.
This MOSFET uses metal-oxide semiconductor technology and is designed for through-hole mounting in a TO-220-3 package with a TO-220AB supplier device package. It supports a gate drive voltage of 10V and has a maximum gate-source voltage of ±20V. The gate threshold voltage is 4V maximum at a drain current of 250µA.
The device can dissipate up to 125W at 25°C case temperature and operates over a junction temperature range of -55°C to 150°C. It has a maximum gate charge of 80nC at 10V and a maximum input capacitance of 980pF at 25V drain-source voltage.
With its high voltage rating and moderate current capability, this MOSFET is suitable for power switching applications requiring high voltage handling. The TO-220 package provides good thermal performance for through-hole PCB designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.48 | $3.48 |
| 10+ | $1.70 | $1.70 |
| 100+ | $1.43 | $1.43 |
| 500+ | $1.12 | $1.12 |
| 1,000+ | $1.05 | $1.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 1000V.
The continuous drain current is 3.1A at 25°C case temperature.
The maximum on-resistance is 5 ohms at a drain current of 1.9A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The IRFBG30PBF is available in a TO-220-3 through-hole package with a TO-220AB supplier device package.
The maximum power dissipation is 125W at 25°C case temperature.
The maximum gate threshold voltage is 4V at a drain current of 250µA.