STD6N65M2 The STMicroelectronics STD6N65M2 is an N-Channel MOSFET designed for power switching applications. It offers a 650V drain-source voltage and a 4A continuous current rating.
Mfr Part #:

STD6N65M2

Available from 2 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The STMicroelectronics STD6N65M2 is an N-Channel MOSFET designed for power switching applications. It offers a 650V drain-source voltage and a 4A continuous current rating.
✓ Total Stock: 7,610 pcs
$ Price Range: $2.56

STD6N65M2 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
7,500 pcs
7500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
110 pcs
110 pcs On Request 1 On Request On Request 17+ On Request On Request

STD6N65M2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

STD6N65M2 Description

Short technical summary and product information.

The STMicroelectronics STD6N65M2 is a single N-Channel MOSFET with a maximum drain-source voltage of 650V and a continuous drain current of 4A at a case temperature of Tc. It features a low Rds On of 1.35 Ohm maximum at 2A drain current and 10V gate-source voltage. The MOSFET operates within a temperature range of -55°C to 150°C (TJ).

 

This device is housed in a TO-252-3, DPak (2 Leads + Tab), SC-63 package, designed for surface mounting. Key electrical characteristics include an input capacitance of 226 pF at 100V and a gate charge of 9.8 nC at 10V. The gate threshold voltage is 4V at 250µA, and the maximum gate-to-source voltage is ±25V.

 

With a maximum power dissipation of 60W (Tc), the STD6N65M2 is suitable for various power electronics applications requiring efficient switching and high voltage handling. Its N-Channel configuration and metal oxide technology make it a versatile component for designers.

STD6N65M2 Quick Information

Product Type: MOSFET
Canonical Name: STD6N65M2 N-Channel MOSFET
Subcategory: N-Channel

STD6N65M2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

STD6N65M2 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

STD6N65M2 Features

  • 650V drain-source voltage rating.
  • 4A continuous drain current.
  • 1.35 Ohm maximum Rds On.
  • Surface mount DPAK package.
  • N-Channel MOSFET technology.

STD6N65M2 Applications

  • Suitable for high-voltage DC-DC converters.
  • Used in power factor correction circuits.
  • Ideal for LED lighting power supplies.
  • Works in auxiliary and bias supplies.
  • Used in flyback converter topologies.

STD6N65M2 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the STD6N65M2?

The maximum drain-source voltage (Vdss) is 650V.

What is the continuous drain current rating of the STD6N65M2?

The continuous drain current is 4A, measured at the case temperature.

What is the maximum Rds On for the STD6N65M2?

The maximum Rds On is 1.35 Ohm when the drain current is 2A and gate-source voltage is 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the STD6N65M2 supplied in?

It is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package for surface mounting.

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