FQD7N30TM N-Channel MOSFET rated for 300V drain-source voltage and 5.5A continuous drain current. On-resistance of 700mOhm at 10V gate drive.
Mfr Part #:

FQD7N30TM

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 300V drain-source voltage and 5.5A continuous drain current. On-resistance of 700mOhm at 10V gate drive.
✓ Total Stock: 7,650 pcs

FQD7N30TM Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 11+ On Request On Request
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150 pcs
150 pcs On Request 1 On Request On Request 09+11 On Request On Request

FQD7N30TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQD7N30TM Description

Short technical summary and product information.

The FQD7N30TM is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications in power management circuits.

 

Key electrical ratings include a drain-source voltage of 300V, continuous drain current of 5.5A at case temperature, and a maximum on-resistance of 700mOhm at 2.75A gate current and 10V gate-source voltage. The device features a gate threshold voltage of 5V at 250µA and can withstand a maximum gate-source voltage of ±30V. Input capacitance is 610pF at 25V drain-source bias, and total gate charge is 17nC at 10V.

 

The FQD7N30TM is offered in a surface mount DPAK (TO-252) package with the supplier device package designated as TO-252AA. Operating junction temperature range is -55°C to 150°C. Maximum power dissipation is 2.5W at ambient temperature and 50W at case temperature.

FQD7N30TM Quick Information

Product Type: MOSFET
Canonical Name: FQD7N30TM N-Channel MOSFET
Subcategory: Single MOSFET

FQD7N30TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD7N30TM Features

  • N-Channel enhancement mode MOSFET.
  • Rated for 300V drain-source voltage.
  • Maximum continuous drain current 5.5A.
  • On-resistance 700mOhm at 10V gate drive.
  • Surface mount DPAK (TO-252) package.

FQD7N30TM Applications

  • Power supply switching circuits.
  • DC-DC converter designs.
  • Motor drive and control applications.
  • High-voltage load switching.

FQD7N30TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the FQD7N30TM?

The maximum drain-source voltage (Vdss) is 300V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current (Id) is 5.5A at case temperature (Tc).

What is the on-resistance of the FQD7N30TM?

The maximum on-resistance (Rds(on)) is 700mOhm at a drain current of 2.75A and gate-source voltage of 10V.

What package does the FQD7N30TM use?

The FQD7N30TM is supplied in a surface mount DPAK (TO-252) package with the supplier device package designated as TO-252AA.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the gate threshold voltage of this MOSFET?

The maximum gate threshold voltage (Vgs(th)) is 5V at a drain current of 250µA.

Is the FQD7N30TM RoHS compliant?

Based on available data, the RoHS status is listed as RoHS3 Compliant but this information is unverified and should be confirmed with official documentation.

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