SQJ407EP-T1_GE3 The Vishay Dale SQJ407EP-T1_GE3 is a P-Channel Power MOSFET designed for demanding applications. It offers a 30V drain-source voltage and a continuous drain current of 60A.
Mfr Part #:

SQJ407EP-T1_GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SQJ407EP-T1_GE3 is a P-Channel Power MOSFET designed for demanding applications. It offers a 30V drain-source voltage and a continuous drain current of 60A.
✓ Total Stock: 7,523 pcs
$ Price Range: $2.56

SQJ407EP-T1_GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SQJ407EP-T1_GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SQJ407EP-T1_GE3 Description

Short technical summary and product information.

The Vishay Dale SQJ407EP-T1_GE3 is a P-Channel TrenchFET® power MOSFET qualified to AEC-Q101 standards. It features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 60A at 25°C. The MOSFET exhibits a low on-resistance of 4.4mOhm at 10A and 10V Vgs, and 7.1mOhm at 4.5V Vgs.

 

This device is housed in a PowerPAK® SO-8 package, suitable for surface mounting. It operates within a temperature range of -55°C to +150°C. The MOSFET is 100% R_g and UIS tested, ensuring high reliability for automotive and industrial applications.

 

Key electrical characteristics include an input capacitance (Ciss) of 10700 pF at 25V and a gate charge (Qg) of 260 nC at 10V. The maximum gate-source voltage is ±20V, and the gate threshold voltage (Vgs(th)) is 2.5V at 250µA.

 

With a maximum power dissipation of 68W at 25°C, the SQJ407EP-T1_GE3 is designed for power-intensive applications. Its thermal resistance from junction to case is 2.2 °C/W.

SQJ407EP-T1_GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SQJ407EP P-Channel 30 V Power MOSFET
Subcategory: P-Channel

SQJ407EP-T1_GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SQJ407EP-T1_GE3 Estimated Pricing

Qty Low High
1+ $2.56 $2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

SQJ407EP-T1_GE3 Features

  • P-Channel TrenchFET® power MOSFET
  • AEC-Q101 qualified for reliability
  • 30V drain-source voltage rating
  • 60A continuous drain current
  • Low on-resistance: 4.4mOhm at 10A, 10V

SQJ407EP-T1_GE3 Applications

  • Suitable for automotive applications
  • Ideal for power switching circuits
  • High-efficiency power management
  • Designed for demanding applications

SQJ407EP-T1_GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SQJ407EP-T1_GE3?

The drain-source voltage (Vdss) is -30V.

What is the package type of the SQJ407EP-T1_GE3?

PowerPAK SO-8 surface-mount package.

What is the operating temperature range?

-55°C to +175°C junction temperature.

What is the maximum continuous drain current?

-60A at Tc=25°C.

What is the on-resistance?

4.4mOhm maximum at Vgs=-10V, Id=10A.

What is the gate charge?

260nC maximum at Vgs=10V.

What is the maximum power dissipation?

68W at Tc=25°C.

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