| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,421 pcs
|
3421 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,947 pcs
|
2947 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
1,320 pcs
|
1320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Power Dissipation | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FCH041N60F is an N-channel MOSFET from onsemi, built in the SUPERFET II / FRFET family using super-junction charge balance technology. It is rated for a maximum drain-to-source voltage of 600 V and a continuous drain current of 76 A at Tc = 25°C, derated to 48.1 A at Tc = 100°C. Maximum on-resistance is 41 mΩ at Vgs = 10 V and Id = 38 A, with a typical value of 36 mΩ. Typical gate charge is 277 nC at Vgs = 10 V, and typical effective output capacitance is 748 pF.
The device supports pulsed drain current up to 228 A and is rated for a single pulsed avalanche energy of 2025 mJ. Maximum gate-to-source voltage is ±20 V for DC and ±30 V for AC (f > 1 Hz). Power dissipation is rated at 595 W maximum at Tc = 25°C, with junction-to-case thermal resistance of 0.21 °C/W and junction-to-ambient thermal resistance of 40 °C/W. Operating junction temperature range is -55°C to +150°C.
The FCH041N60F comes in a TO-247-3 through-hole package. It is Pb-free, halide-free, and RoHS compliant according to the datasheet. This MOSFET is intended for high-voltage switching power applications including telecom/server power supplies, industrial power supplies, EV chargers, UPS, and solar systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $12.28 | $12.28 |
| 10+ | $7.40 | $7.40 |
| 120+ | $6.97 | $6.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDSS) is 600 V.
The maximum continuous drain current is 76 A at Tc = 25°C, derated to 48.1 A at Tc = 100°C.
Maximum Rds(on) is 41 mΩ at Vgs = 10 V, Id = 38 A; typical Rds(on) is 36 mΩ.
The maximum gate-to-source voltage is ±20 V for DC and ±30 V for AC (f > 1 Hz).
The operating junction temperature range is -55°C to +150°C.
The FCH041N60F is available in a TO-247-3 through-hole package.
Yes, the datasheet marks the device as RoHS compliant, Pb-free, and halide-free.