NDT456P The ON Semiconductor NDT456P is a P-Channel MOSFET with a 30V Drain-Source Voltage and 7.5A Continuous Drain Current. It is supplied in a SOT-223 package.
Mfr Part #:

NDT456P

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NDT456P is a P-Channel MOSFET with a 30V Drain-Source Voltage and 7.5A Continuous Drain Current. It is supplied in a SOT-223 package.
✓ Total Stock: 7,801 pcs
$ Price Range: $0.99

NDT456P Available from 4 distributors

✓ Authorised
✓ Non-Authorised

NDT456P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Style
Mounting Type
Operating Temperature
Power Dissipation
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NDT456P Description

Short technical summary and product information.

The ON Semiconductor NDT456P is a P-Channel MOSFET designed for various electronic applications. It features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current of 7.5A (Ta).

 

The MOSFET has a low Rds On of 30mOhm at 7.5A and 10V, with a gate threshold voltage of 3V at 250µA. The input capacitance (Ciss) is 1440 pF at 15V, and the gate charge (Qg) is a maximum of 67 nC at 10V. It operates within a temperature range of -65°C to 150°C (TJ).

 

This device is packaged in a SOT-223-4 surface mount package, suitable for automated assembly processes. The MOSFET technology utilizes Metal Oxide Semiconductor construction.

 

Key electrical characteristics include a maximum gate-source voltage of ±20V and a power dissipation of 3W (Ta). The rise time is 65 ns and the fall time is 70 ns, with a typical turn-off delay time of 70 ns.

NDT456P Quick Information

Product Type: MOSFET
Series: NDT456
Canonical Name: NDT456P P-Channel MOSFET
Subcategory: P-Channel

NDT456P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NDT456P Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NDT456P Features

  • P-Channel MOSFET technology.
  • 30V Drain-Source Voltage rating.
  • 7.5A continuous drain current.
  • Low Rds On of 30mOhm.
  • SOT-223 surface mount package.

NDT456P Applications

  • Power switching applications.
  • General purpose electronics.
  • Load switching circuits.
  • Battery management systems.

NDT456P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Voltage (Vdss) for the NDT456P?

The Drain-Source Voltage (Vdss) for the NDT456P is 30 V.

What is the maximum continuous drain current for the NDT456P?

The maximum continuous drain current for the NDT456P is 7.5 A (Ta).

What is the Rds On (Max) for the NDT456P?

The Rds On (Max) for the NDT456P is 30 mOhm at 7.5A and 10V.

What is the operating temperature range of the NDT456P?

The operating temperature range of the NDT456P is -65°C to 150°C (TJ).

What package type is the NDT456P MOSFET supplied in?

The NDT456P MOSFET is supplied in a SOT-223-4 package.

What is the gate charge for the NDT456P?

The gate charge (Qg) for the NDT456P is a maximum of 67 nC at 10V.

What is the gate threshold voltage of the NDT456P?

The gate threshold voltage (Vgs(th)) for the NDT456P is 3V at 250µA.

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