| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,199 pcs
|
6199 pcs | On Request | 1 | On Request | On Request | 1625+ | On Request | On Request | |
|
1,530 pcs
|
1530 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR7440TRPBF is an N-Channel power MOSFET from Infineon Technologies, part of the StrongIRFET family. It is designed for high-efficiency power conversion applications including motor drives, DC/DC converters, and synchronous rectification.
This MOSFET features a drain-to-source breakdown voltage of 40V and a continuous drain current of 90A (package limited) or 180A (silicon limited). The maximum drain-to-source on-resistance is 2.4mΩ at VGS=10V and ID=90A, with a typical value of 1.9mΩ. Gate threshold voltage ranges from 2.2V to 3.9V. The device can handle pulsed drain currents up to 760A and has a maximum power dissipation of 140W at case temperature 25°C.
The StrongIRFET technology provides improved gate, avalanche, and dynamic dV/dt ruggedness, making it suitable for robust applications. The device is fully characterized for capacitance and avalanche SOA. It is RoHS compliant, lead-free, and halogen-free.
The IRFR7440TRPBF is offered in a D-Pak (TO-252) surface mount package with gull wing leads. It is supplied in tape and reel packaging with a standard quantity of 2000 pieces per reel. Operating junction temperature range is -55°C to 175°C.
The minimum drain-to-source breakdown voltage is 40 V.
The continuous drain current is 90 A (package limited) at Tc=25°C, and 180 A (silicon limited) at Tc=25°C with VGS=10V.
The maximum drain-to-source on-resistance is 2.4 mΩ at VGS=10V, ID=90A. Typical value is 1.9 mΩ under same conditions.
The operating junction temperature range is -55°C to 175°C.
The package is D-Pak (TO-252) surface mount.
Yes, the device is RoHS3 compliant and lead-free.
The gate threshold voltage ranges from 2.2 V (minimum) to 3.9 V (maximum), with a typical value of 3.0 V at VDS=VGS, ID=100µA.