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BSS123NH6327XTSA1 N-Channel MOSFET with 100V drain-source breakdown voltage and 0.19A continuous drain current. Surface mount package SOT-23-3.
Mfr Part #:

BSS123NH6327XTSA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 100V drain-source breakdown voltage and 0.19A continuous drain current. Surface mount package SOT-23-3.
✓ Total Stock: 7,735 pcs
$ Price Range: $0.05 - $0.32

BSS123NH6327XTSA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
5,724 pcs
On Request
5724 pcs On Request 1 On Request On Request 25+ On Request On Request
Eito Shoji ✓
Non-Authorised Inventory information
2,011 pcs
On Request
2011 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSS123NH6327XTSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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BSS123NH6327XTSA1 Description

Short technical summary and product information.

The BSS123NH6327XTSA1 is an N-Channel enhancement mode MOSFET from Infineon's OptiMOS series. It features a drain-source breakdown voltage of 100V and continuous drain current of 0.19A at 25°C. The device is logic level rated with a gate threshold voltage of 1.8V maximum. On-state resistance is 6 Ohm maximum at 10V gate drive. The MOSFET is avalanche rated and qualified to AEC Q101 for automotive applications. It is housed in a PG-SOT23 surface mount package and is RoHS compliant and halogen free. The device is suitable for low-power switching applications.

BSS123NH6327XTSA1 Quick Information

Product Type: N-Channel MOSFET
Series: BSS123N
Canonical Name: Infineon BSS123NH6327XTSA1 N-Channel MOSFET, 100V, 0.19A, SOT-23-3
Subcategory: N-Channel MOSFET

BSS123NH6327XTSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

BSS123NH6327XTSA1 Estimated Pricing

Qty Low High
1+ $0.32 $0.32
10+ $0.20 $0.20
100+ $0.12 $0.12
500+ $0.09 $0.09
1,000+ $0.08 $0.08
3,000+ $0.07 $0.07
6,000+ $0.06 $0.06
9,000+ $0.05 $0.05
24,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS123NH6327XTSA1 Features

  • N-Channel enhancement mode MOSFET.
  • 100V drain-source breakdown voltage.
  • 0.19A continuous drain current.
  • Logic level gate drive (4.5V rated).
  • AEC-Q101 qualified for automotive.

BSS123NH6327XTSA1 Applications

  • Used in low-power DC-DC converters.
  • Ideal for load switching applications.
  • Suitable for automotive electronic modules.
  • Used in portable battery-powered devices.

BSS123NH6327XTSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V minimum.

What package is this MOSFET available in?

PG-SOT23 surface mount package (also known as SOT-23-3).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is this component RoHS compliant?

Yes, it is RoHS3 compliant and 100% lead-free.

What is the gate threshold voltage?

Maximum 1.8V at 13µA drain current.

What is the maximum drain current?

0.19A continuous at 25°C ambient.

Is this MOSFET qualified for automotive use?

Yes, it is AEC-Q101 qualified.

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