| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,020 pcs
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4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,431 pcs
|
1431 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,073 pcs
|
1073 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,073 pcs
|
1073 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Forward Voltage | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Voltage |
This Vishay Dale SI2329DS-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of -8V and a continuous drain current of up to 6A (Tc).
The MOSFET operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a maximum gate-source voltage of ±5V and a maximum on-resistance of 30mOhm @ 5.3A, 4.5V. The input capacitance is 1485 pF @ 4V, and the gate charge is 29 nC @ 4.5V.
Packaged in a compact SOT-23-3 (TO-236) surface-mount case, this component is suitable for space-constrained designs. The maximum power dissipation is rated at 2.5W (Tc). It is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
This MOSFET is ideal for switching applications where a P-Channel device is required. Its specifications make it suitable for use in power management circuits, load switching, and other general-purpose discrete semiconductor applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -8V.
The device is housed in a surface-mount SOT-23-3 (TO-236) package.
The junction temperature range is -55°C to 150°C.
The maximum gate charge is 29 nC at 4.5V Vgs.
The maximum on-resistance is 30mOhm at 5.3A drain current and 4.5V gate-source voltage.
The maximum continuous drain current is 6A at Tc.
The maximum gate threshold voltage is 800mV at 250µA drain current.