SI1012R-T1-E3 The Vishay Dale SI1012R-T1-E3 is an N-Channel MOSFET designed for surface mount applications. It features a 20V drain-source voltage and a continuous current rating of 500mA.
Mfr Part #:

SI1012R-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI1012R-T1-E3 is an N-Channel MOSFET designed for surface mount applications. It features a 20V drain-source voltage and a continuous current rating of 500mA.
✓ Total Stock: 7,705 pcs
$ Price Range: $0.99

SI1012R-T1-E3 Available from 3 distributors

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✓ Non-Authorised
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3,500 pcs
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2,620 pcs
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1,585 pcs
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SI1012R-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI1012R-T1-E3 Description

Short technical summary and product information.

The SI1012R-T1-E3 from Vishay Dale is a single N-Channel MOSFET designed for various electronic applications. It operates with a maximum drain-source voltage of 20V and can handle a continuous current of 500mA at ambient temperature.

 

This MOSFET utilizes Metal Oxide technology and has a gate threshold voltage of 900mV at 250µA. The on-resistance is rated at a maximum of 700mOhm at 600mA and 4.5V gate-source voltage. It is designed for surface mounting and comes in a SC-75A package.

 

Key electrical characteristics include a maximum gate-source voltage of ±6V and a gate charge of 0.75nC at 4.5V. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW at ambient temperature.

SI1012R-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: SI1012R-T1-E3 N-Channel MOSFET
Subcategory: Single

SI1012R-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI1012R-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI1012R-T1-E3 Features

  • N-Channel MOSFET technology
  • 20V drain-source voltage rating
  • 500mA continuous current capability
  • Surface mount SC-75A package
  • RoHS3 compliant

SI1012R-T1-E3 Applications

  • Ideal for low-power DC/DC converters.
  • Used in portable battery-powered devices.
  • Suitable for load switching applications.
  • Can be used in signal switching circuits.

SI1012R-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

The SI1012R-T1-E3 has a maximum drain-source voltage of 20V.

What package is the SI1012R-T1-E3 available in?

The device is available in SC-75, SOT-416 surface-mount package, with the supplier device package SC-75A.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (junction).

What is the gate charge of this MOSFET?

The maximum gate charge is 0.75nC at Vgs=4.5V.

What is the on-resistance of the SI1012R-T1-E3?

The maximum on-resistance is 700mOhm at Id=600mA and Vgs=4.5V.

What is the gate threshold voltage?

The maximum gate threshold voltage is 900mV at Id=250µA.

What is the continuous drain current rating?

The maximum continuous drain current is 500mA at ambient temperature.

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