| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,610 pcs
|
7610 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The TSM500P02CX RFG is a single P-Channel MOSFET manufactured by Taiwan Semiconductor. It is designed for surface mount applications and comes in a SOT-23 package.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 4.7A at 25°C case temperature. The on-resistance (Rds On) is a maximum of 50mOhm at 3A and 4.5V gate-source voltage. Gate charge (Qg) is 9.6 nC maximum at 4.5V, and input capacitance (Ciss) is 850 pF maximum at 10V.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It has a power dissipation of 1.56W (Tc) maximum. The gate threshold voltage (Vgs(th)) is 800mV maximum at 250µA, and the maximum gate-source voltage (Vgs) is ±10V.
The TSM500P02CX RFG is suitable for various electronic circuits requiring a P-Channel MOSFET with these specifications. Its surface mount package facilitates integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
It is available in TO-236-3, SC-59, and SOT-23-3 packages.
The maximum operating junction temperature is 150°C.
The continuous drain current is 4.7A at Tc.
The on-resistance is 50mΩ maximum at 3A drain current and 4.5V gate-source voltage.
The gate charge is 9.6nC at 4.5V gate-source voltage.
The maximum gate threshold voltage is 800mV at 250µA drain current.