| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
2,296 pcs
|
2296 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,321 pcs
|
1321 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
937 pcs
|
937 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SIS892ADN-T1-GE3 is a high-performance N-Channel Power MOSFET designed for various applications including telecom bricks, primary side switching, and synchronous rectification.
This MOSFET boasts a drain-source voltage (Vds) of 100V and a continuous drain current (ID) of up to 28A at 25°C case temperature. Its low on-resistance (RDS(on)) is 33mOhm maximum at 10A and 10V gate-source voltage, with further low values at lower gate drive voltages (36mOhm at 7.5V, 47mOhm at 4.5V). The typical gate charge (Qg) is 6.1nC, with a maximum of 19.5nC at 10V.
Packaged in the compact PowerPAK® 1212-8, this surface-mount device operates within a junction temperature range of -55°C to 150°C. It is designed for efficient power management with a maximum power dissipation of 52W at 25°C case temperature and 3.7W at 25°C ambient temperature.
The SIS892ADN-T1-GE3 is manufactured using TrenchFET® technology and is 100% Rg and UIS tested, capable of operating with 5V gate drive. It is also specified as Lead (Pb)-free and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) for the SIS892ADN-T1-GE3 is 100V.
The maximum continuous drain current (ID) is 28A at 25°C case temperature.
The maximum on-resistance is 33mOhm at 10A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to 150°C.
The SIS892ADN-T1-GE3 is in a PowerPAK® 1212-8 package for surface mounting.
The SIS892ADN-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.