IRFP90N20DPBF N-Channel power MOSFET rated for 200V drain-source voltage and 94A continuous drain current. Features 23mΩ on-resistance and comes in a TO-247AC through-hole package.
Mfr Part #:

IRFP90N20DPBF

Available from 3 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET rated for 200V drain-source voltage and 94A continuous drain current. Features 23mΩ on-resistance and comes in a TO-247AC through-hole package.
✓ Total Stock: 7,611 pcs

IRFP90N20DPBF Available from 3 distributors

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IRFP90N20DPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

IRFP90N20DPBF Description

Short technical summary and product information.

The IRFP90N20DPBF is an N-Channel power MOSFET from Infineon Technologies designed for high-efficiency switching applications. It offers a drain-source breakdown voltage of 200V and a continuous drain current of 94A at 25°C case temperature, making it suitable for medium-voltage power conversion.

 

This MOSFET features a maximum drain-source on-resistance of 23mΩ at Vgs=10V and Id=56A, contributing to low conduction losses. It also provides low gate charge (180nC typical) and fast switching characteristics (23ns turn-on delay, 43ns turn-off delay), which reduce switching losses in high-frequency circuits. The device is avalanche-rated with a single-pulse energy capability of 1010mJ.

 

The IRFP90N20DPBF is housed in a TO-247AC through-hole package with standard tube packaging of 25 pieces. It operates over a junction temperature range of -55°C to 175°C and is RoHS3 compliant per manufacturer designation. The high-current and high-voltage ratings make it ideal for DC-DC converters, motor drives, and other power supply topologies.

IRFP90N20DPBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFP90N20DPBF N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IRFP90N20DPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFP90N20DPBF Features

  • N-channel 200V power MOSFET
  • Low drain-source on-resistance 23mΩ
  • High continuous drain current 94A
  • Fast switching with low gate charge
  • Avalanche rated 1010mJ

IRFP90N20DPBF Applications

  • High frequency DC-DC converters
  • Power supply and motor drive circuits
  • Switching applications requiring high efficiency
  • Uninterruptible power supplies (UPS)

IRFP90N20DPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFP90N20DPBF?

The drain-source breakdown voltage is 200V.

What package does the IRFP90N20DPBF come in?

It comes in a TO-247-3 (TO-247AC) through-hole package.

What is the operating temperature range?

The junction operating temperature range is -55°C to 175°C.

Is the IRFP90N20DPBF RoHS compliant?

It is marked as RoHS3 compliant, though this is unverified from source documents.

What is the maximum continuous drain current at 25°C?

The continuous drain current is 94A at Tc=25°C with Vgs=10V.

What is the typical on-resistance?

The maximum drain-source on-resistance is 23mΩ at Vgs=10V and Id=56A.

Does the MOSFET have avalanche rating?

Yes, the single pulse avalanche energy (EAS) is rated at 1010mJ.

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