Mfr Part #:

TPN4R203NC,L1Q

Mfr Name: Toshiba

The Toshiba TPN4R203NC,L1Q is an N-Channel MOSFET with a 30V drain-to-source voltage and 23A continuous drain current. It is designed for surface mount applications.

✓ Total Stock: 7,666 pcs

$ Price Range: $2.56

TPN4R203NC,L1Q Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	7,666 pcs On Request	7666 pcs	On Request	1	On Request	On Request	1449+	On Request	On Request

TPN4R203NC,L1Q Description

Short technical summary and product information.

The Toshiba TPN4R203NC,L1Q is a single N-Channel MOSFET from the U-MOSVIII series, designed for discrete semiconductor applications. It features a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current of 23A at 25°C (Ta). The MOSFET exhibits a maximum on-resistance (Rds On) of 4.2mOhm at 11.5A and 10V gate-source voltage (Vgs), with a gate threshold voltage (Vgs(th)) of 2.3V at 200µA.

With a maximum gate charge (Qg) of 24nC at 10V Vgs and an input capacitance (Ciss) of 1370pF at 15V Vds, this device is suitable for various switching applications. The maximum gate-source voltage is rated at ±20V. The power dissipation is 700mW (Ta) or 22W (Tc), and it operates within a temperature range of -40°C to 150°C (TJ).

Packaged in an 8-TSON Advance (3.1x3.1) or 8-PowerVDFN, the TPN4R203NC,L1Q is designed for surface mounting. It is RoHS compliant and has a Moisture Sensitivity Level (MSL) of 1.

TPN4R203NC,L1Q Quick Information

Product Type: MOSFET

Series: U-MOSVIII

Canonical Name: Toshiba TPN4R203NC,L1Q N-Channel MOSFET

Subcategory: Single

TPN4R203NC,L1Q Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

TPN4R203NC,L1Q Estimated Pricing

Qty	Low	High
1+	$2.56	$2.56

Estimated market price range - modelled values for guidance only, not live distributor offers.

TPN4R203NC,L1Q Features

N-Channel MOSFET with 30V Vdss.
Continuous drain current of 23A.
Low on-resistance of 4.2mOhm.
Surface mountable 8-TSON package.
RoHS compliant.

TPN4R203NC,L1Q Applications

Suitable for power management circuits.
Ideal for switching applications.
Used in discrete component protection.
Applicable in communication systems.

TPN4R203NC,L1Q FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage (Vdss) for the TPN4R203NC,L1Q?

The drain-to-source voltage (Vdss) for the TPN4R203NC,L1Q is 30V.

What is the continuous drain current at 25°C for this MOSFET?

The continuous drain current (Id) at 25°C (Ta) for the TPN4R203NC,L1Q is 23A.

What is the maximum on-resistance (Rds On) for the TPN4R203NC,L1Q?

The maximum on-resistance (Rds On) is 4.2mOhm when the drain current is 11.5A and the gate-source voltage is 10V.

What is the operating temperature range for the TPN4R203NC,L1Q?

The operating temperature range for the TPN4R203NC,L1Q is up to 150°C (TJ).

What package type is the TPN4R203NC,L1Q supplied in?

The TPN4R203NC,L1Q is supplied in an 8-TSON Advance (3.1x3.1) package, also referred to as 8-PowerVDFN.

Is the TPN4R203NC,L1Q RoHS compliant?

Yes, the TPN4R203NC,L1Q is RoHS compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level (MSL) for the TPN4R203NC,L1Q is 1.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Toshiba
Current	23A (Ta)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 15 V
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Power Dissipation (Max)	700mW (Ta), 22W (Tc)
Rds On (Max) @ Id, Vgs	4.2mOhm @ 11.5A, 10V
Supplier Device Package	8-TSON Advance (3.1x3.1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.3V @ 200μA