| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,478 pcs
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3478 pcs | On Request | 1 | On Request | On Request | 1417+ | On Request | On Request | |
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3,250 pcs
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3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPB80N04S2-H4 is an N-channel enhancement-mode power MOSFET from Infineon Technologies, part of the OptiMOS family. It is rated for a 40 V drain-source voltage, 80 A continuous drain current at Tc=25°C, and 320 A pulsed drain current. The device is designed for automotive applications and is AEC Q101 qualified, with a maximum operating junction temperature of 175°C.
The MOSFET features an ultra-low drain-source on-state resistance of 3.2 mΩ typical and 3.7 mΩ maximum (SMD version at Vgs=10V, Id=80A). The gate threshold voltage ranges from 2.1V to 4.0V, and the maximum gate-source voltage is ±20V. It offers 300W power dissipation at Tc=25°C and an avalanche energy rating of 660 mJ, with 100% avalanche tested.
This model is supplied in a surface-mount PG-TO263-3-2 package with MSL1 capability up to 260°C peak reflow. The product is RoHS compliant and has a junction-to-case thermal resistance of 0.5 K/W. Typical switching characteristics include 23 ns turn-on delay, 63 ns rise time, 46 ns turn-off delay, and 22 ns fall time under specified test conditions.
The IPB80N04S2-H4 is suitable for high-current automotive power switching functions such as electric power steering (EPS) control, where low conduction losses and high temperature operation are required.
The IPB80N04S2-H4 is rated for 40 V drain-to-source voltage (Vdss).
The maximum continuous drain current is 80 A at Tc=25°C with Vgs=10 V; pulsed drain current is up to 320 A.
For the SMD version, Rds(on) is 3.2 mΩ typical and 3.7 mΩ maximum at Vgs=10 V and Id=80 A.
The IPB80N04S2-H4 is supplied in a surface-mount PG-TO263-3-2 package (TO-263-3, D2Pak with 2 leads plus tab).
The operating and storage temperature range is -55°C to +175°C junction temperature.
Yes, it is RoHS compliant; the datasheet marks it as a green product.
The maximum power dissipation is 300 W at Tc=25°C.