SI4634DY-T1-GE3 The Vishay Dale SI4634DY-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 24.5A continuous current. It comes in an 8-SOIC package.
Mfr Part #:

SI4634DY-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4634DY-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 24.5A continuous current. It comes in an 8-SOIC package.
✓ Total Stock: 7,581 pcs
$ Price Range: $0.99

SI4634DY-T1-GE3 Available from 1 distributor

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✓ Non-Authorised
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7,581 pcs
7581 pcs On Request 1 On Request On Request 07+ On Request On Request

SI4634DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4634DY-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI4634DY-T1-GE3 is an N-Channel MOSFET designed for various applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 24.5A at 25°C case temperature.

 

This MOSFET offers a low on-state resistance (Rds(on)) of 5.2mOhm at a gate-source voltage (Vgs) of 10V and a drain current (Id) of 15A. The gate charge (Qg) is a maximum of 68nC at Vgs = 10V. The input capacitance (Ciss) is typically 3150pF at Vds = 15V and 1MHz.

 

With a maximum power dissipation of 2.5W at 25°C ambient temperature and 5.7W at 25°C case temperature, it operates within a junction and storage temperature range of -55°C to 150°C. The device is housed in an 8-SOIC package and is surface-mount compatible.

 

This component is suitable for applications requiring efficient power switching and management. Its specifications make it a viable option for buck converters and synchronous rectifier circuits.

SI4634DY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 30V MOSFET
Subcategory: N-Channel

SI4634DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4634DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4634DY-T1-GE3 Features

  • 30V drain-source voltage rating.
  • 24.5A continuous drain current.
  • Low 5.2mOhm on-resistance.
  • Surface mount 8-SOIC package.
  • Wide -55°C to 150°C operating temp.

SI4634DY-T1-GE3 Applications

  • Used in buck converter designs.
  • Suitable for synchronous rectifiers.
  • Ideal for notebook power systems.
  • Applicable in secondary rectification.

SI4634DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI4634DY-T1-GE3?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the continuous drain current rating?

The maximum continuous drain current is 24.5A at 25°C case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 5.2mOhm at 15A drain current and 10V gate-source voltage.

What package is the SI4634DY-T1-GE3 available in?

It is available in an 8-SOIC surface mount package with a 3.90mm body width.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the gate threshold voltage?

The maximum gate-source threshold voltage is 2.6V at VDS = VGS and ID = 250µA.

What is the maximum power dissipation?

Maximum power dissipation is 2.5W at 25°C ambient temperature and 5.7W at 25°C case temperature.

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