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FCP600N65S3R0 FCP600N65S3R0 is a 650V, 6A N-Channel Power MOSFET from On Semiconductor's SUPERFET III series. It features low gate charge (11nC) and low effective output capacitance (127pF) for efficient switching in power supply applications.
Mfr Part #:

FCP600N65S3R0

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FCP600N65S3R0 is a 650V, 6A N-Channel Power MOSFET from On Semiconductor's SUPERFET III series. It features low gate charge (11nC) and low effective output capacitance (127pF) for efficient switching in power supply applications.
✓ Total Stock: 7,700 pcs

FCP600N65S3R0 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
4,220 pcs
On Request
4220 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
3,480 pcs
On Request
3480 pcs On Request 1 On Request On Request On Request On Request On Request
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FCP600N65S3R0 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FCP600N65S3R0 Description

Short technical summary and product information.

The FCP600N65S3R0 is an N-Channel Power MOSFET from On Semiconductor, part of the SUPERFET III Easy Drive series. It utilizes charge balance technology to achieve a typical on-resistance of 493 mΩ and a maximum of 600 mΩ at 10V gate drive. The device is rated for 650V drain-source voltage and can handle 6A continuous drain current at 25°C case temperature.

 

Key electrical characteristics include ultra-low gate charge (typical 11 nC) and low effective output capacitance (typical 127 pF), enabling high-frequency switching with reduced drive losses. The MOSFET is 100% avalanche tested, with single pulsed avalanche energy rated at 24 mJ and repetitive avalanche energy at 0.54 mJ. It also offers a 100 V/ns MOSFET dv/dt rating and peak diode recovery dv/dt of 20 V/ns.

 

This component is housed in a through-hole TO-220-3 package, supplied in tubes of 50 units per tube. It is Pb-Free and RoHS compliant, ensuring environmental compatibility. The operating junction temperature range is -55°C to 150°C, with a junction-to-case thermal resistance of 2.3°C/W and junction-to-ambient of 62.5°C/W.

 

Typical applications include computing and display power supplies, telecom and server power supplies, industrial power supplies, and lighting/charger/adapter circuits.

FCP600N65S3R0 Quick Information

Product Type: N-Channel MOSFET
Series: Easy Drive
Canonical Name: FCP600N65S3R0 N-Channel MOSFET 650V 6A
Subcategory: Power MOSFET

FCP600N65S3R0 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free and RoHS Compliant

FCP600N65S3R0 Features

  • N-Channel MOSFET rated for 650V drain-source.
  • Low on-resistance at 600 mΩ typical.
  • Ultra low gate charge of 11 nC typical.
  • 100% avalanche tested for ruggedness.
  • Pb-Free and RoHS compliant package.

FCP600N65S3R0 Applications

  • Used in computing and display power supplies.
  • Suitable for telecom and server power supplies.
  • Ideal for industrial power supply designs.
  • Applicable in lighting, charger, and adapters.

FCP600N65S3R0 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

650 V

What is the package type?

TO-220-3

What is the operating temperature range?

-55°C to 150°C junction temperature

Is this part RoHS compliant?

Yes, it is Pb-Free and RoHS Compliant as stated in the datasheet.

What is the on-resistance?

Maximum 600 mΩ at 10V gate drive with 3A drain current.

What is the continuous drain current?

6A at 25°C case temperature, derated to 3.8A at 100°C.

What is the gate charge?

Maximum 11 nC at 10V gate-source voltage.

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