| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,198 pcs
|
1198 pcs | On Request | 1 | On Request | On Request | 2010 | On Request | On Request | |
|
282 pcs
|
282 pcs | On Request | 1 | On Request | On Request | 05+41 | On Request | On Request | |
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFL110PBF is an N-Channel Power MOSFET designed for high-speed switching applications. It is built using third-generation power MOSFET technology, offering fast switching, low on-resistance, and rugged device design. Key electrical specifications include a drain-source voltage rating of 100V, a continuous drain current of 1.5A at 25°C (0.96A at 100°C), and a maximum on-resistance of 0.54Ω at 10V gate drive. The device features a total gate charge of 8.3 nC and an input capacitance of 180 pF, enabling efficient gate drive and reduced switching losses. The MOSFET is avalanche rated with a single pulse avalanche energy of 150 mJ and repetitive avalanche energy of 0.31 mJ, providing robustness in inductive switching circuits. The operating junction temperature range is -55°C to 150°C, with thermal resistance of 60°C/W junction-to-ambient (PCB mount) and 40°C/W junction-to-case. The IRFL110PBF comes in a surface-mount SOT-223 package, which features an enlarged tab for improved thermal performance and is compatible with automated pick-and-place assembly. The package is available in tape and reel packaging for volume production. This MOSFET is suitable for a variety of power management and switching applications.
| Qty | Low | High |
|---|---|---|
| 4,000+ | $0.25 | $0.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 100V.
The continuous drain current at 25°C is 1.5A.
The maximum on-resistance is 0.54Ω at a gate-source voltage of 10V and drain current of 900mA.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface-mount SOT-223 package (TO-261-4, TO-261AA).
The part is listed as RoHS3 compliant, but this status is unverified.
The maximum total gate charge is 8.3 nC at a gate-source voltage of 10V.