CSD19536KTTT N-Channel MOSFET, 100V drain-source voltage, 200A continuous drain current, 2.4mOhm Rds(on) at 10V gate drive.
Mfr Part #:

CSD19536KTTT

Available from 5 distributors
Mfr Name: Texas Instruments
Texas Instruments
N-Channel MOSFET, 100V drain-source voltage, 200A continuous drain current, 2.4mOhm Rds(on) at 10V gate drive.
✓ Total Stock: 21,346 pcs
$ Price Range: $3.50 - $7.85

CSD19536KTTT Available from 5 distributors

✓ Authorised
✓ Non-Authorised

CSD19536KTTT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

CSD19536KTTT Description

Short technical summary and product information.

The CSD19536KTTT is an N-Channel MOSFET from Texas Instruments designed for high-power switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 200A. The low on-resistance of 2.4mOhm (typical at 100A, 10V) minimizes conduction losses in high-current circuits.

 

Key electrical characteristics include a maximum gate charge of 153nC at 10V and an input capacitance of 12000pF at 50V, enabling efficient switching in power converters and motor drives. The device is rated for a power dissipation of 375W and operates over a junction temperature range of -55°C to 175°C.

 

The MOSFET is housed in a surface-mount DDPAK/TO-263-3 package (TO-263-4, D2Pak with 3 leads and tab), suitable for automated assembly. The drive voltage range is 6V to 10V for optimal Rds(on), and the maximum gate-to-source voltage is ±20V.

CSD19536KTTT Quick Information

Product Type: MOSFET
Series: NexFET
Canonical Name: Texas Instruments CSD19536KTTT N-Channel MOSFET
Subcategory: N-Channel MOSFET

CSD19536KTTT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

CSD19536KTTT Estimated Pricing

Qty Low High
1+ $7.85 $7.85
10+ $4.23 $4.23
50+ $4.23 $4.23
100+ $3.50 $3.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

CSD19536KTTT Features

  • N-Channel MOSFET with 100V drain-source voltage rating.
  • 200A continuous drain current capability.
  • Low on-resistance of 2.4mOhm at 10V gate drive.
  • High power dissipation of 375W.
  • Surface mount DDPAK/TO-263-3 package.

CSD19536KTTT Applications

  • Used in high-power DC-DC converters.
  • Suitable for motor control and power management.
  • Ideal for battery protection circuits.
  • Works in switching power supplies.

CSD19536KTTT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the CSD19536KTTT?

The drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating?

The continuous drain current is 200A (at Ta).

What is the typical on-resistance?

The maximum on-resistance is 2.4mOhm at 100A and 10V gate drive.

What is the operating temperature range?

The junction temperature range is -55°C to 175°C.

What package is this MOSFET available in?

It is available in a TO-263-4 (D2Pak) surface mount package with 3 leads and tab, also supplied as DDPAK/TO-263-3.

Is the CSD19536KTTT RoHS compliant?

RoHS3 compliant status is listed but unverified; treat as low confidence.

What is the gate charge of this MOSFET?

The maximum gate charge is 153nC at 10V gate-source voltage.

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