Transistors - IGBTs - Single DistyParts

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Transistors - IGBTs - Single facilitate efficient power control in electronic circuits. Key attributes include Current, Gate Charge, and IGBT Type. These components are essential for applications such as new product design and prototyping.

What are Transistors - IGBTs - Single ?

Transistors - IGBTs - Single are semiconductor devices used for switching and amplifying electronic signals. They are commonly utilized in applications like production electronics assembly and maintenance. Important specifications for selection include Current, which determines the maximum load the transistor can handle; Gate Charge, which affects the switching speed and efficiency; and Operating Temperature, crucial for ensuring reliability in various environments. Procurement teams should validate lifecycle status and consider alternate-source options to mitigate sourcing risks.

Part & Mfr

Total Stock

Pricing & RFQ

AEC Qualified

AEC-Q101

Automotive Grade

Avalanche Energy

Breakdown Voltage

Capacitance

Clamped Inductive Load Current

Collector - Emitter Saturation Voltage

Collector Current (@ TC = 100 °C)

Collector Current (Continuous, TC=110°C)

Collector Current (DC) (Maximum @ Tc=100 °C)

Collector Current (Ic)

Collector Current (Maximum @ TC = 110 °C)

Collector Current (Maximum @ TC=100 °C)

Collector Current (Maximum @ TC=25 °C)

Collector Current (Maximum @ TC=90 °C)

Collector Current (Maximum)

Collector Current (Nominal @ TC = 100 °C)

Collector Current (Nominal)

Collector Current (Pulsed)

Collector Current - Continuous

Collector Current Continuous (Maximum @ TC=110 °C)

Collector Current Continuous (Nominal @ Tc=100 °C)

Collector Current Pulsed (ICM)

Collector Cut-Off Current

Collector Cut-Off Current (ICES)

Collector Cutoff Current (Maximum @ Vge = 0 V, Vce = 1200 V)

Collector Cutoff Current (Maximum @ Vge = 0 V, Vce = 1200 V, Tj = 175 °C)

Collector Emitter Cut Off Current (Maximum @ VGE = 0 V, VCE = 600 V, TJ = 150 °C)

Collector Emitter Cutoff Current (Maximum @ VGE = 0 V, VCE = 1200 V)

Collector Emitter Cutoff Current (Maximum @ VGE = 0 V, VCE = 600 V)

Collector Emitter Cutoff Current (Maximum @ VGE = 0 V, VCE = 600 V, TJ = 175 °C)

Collector Emitter Saturation Voltage (Typical @ Tvj=25 °C)

Collector Emitter Saturation Voltage (Typical)

Collector Emitter Saturation Voltage (Typical/Maximum @ Vge = 15 V, Ic = 20 A)

Collector Emitter Voltage (Maximum)

Collector To Emitter Saturation Voltage (Typical @ IC = 15 A, VGE = 15 V)

Collector To Emitter Saturation Voltage (Typical @ IC = 24 A, VGE = 15 V)

Collector-Emitter Breakdown Voltage

Collector-Emitter Breakdown Voltage (BVCES)

Collector-Emitter Cut-off Current

Collector-Emitter Cutoff Current

Collector-Emitter Saturation Voltage (Typical @ IC=30 A, VGE=15 V, TC=125 °C)

Collector-Emitter Saturation Voltage (Typical @ IC=40 A, VGE=15 V)

Collector-Emitter Saturation Voltage (Typical/Maximum @ Ic=75 A, VGE=15 V)

Collector-Emitter Saturation Voltage (Vce Sat)

Collector-Emitter Voltage

Collector-Emitter Voltage (VCES)

Collector-to-Emitter Breakdown Voltage

Collector-to-Emitter Leakage Current

Collector-to-Emitter Voltage (Vces)

Continuous Collector Current

Continuous Collector Current (Maximum @ 25 °C)

Continuous Collector Current (Maximum @ TC = 100 °C)

Continuous Collector Current (Maximum @ TC = 25 °C)

Continuous Collector Current (Maximum)

Current

Current (Maximum)

Current (Unspecified condition)

Current - Collector (Ic) (Max)

Current - Collector Pulsed (Icm)

Current - Collector, pulsed

Current Collector (Maximum @ TC = 100 °C)

Current Collector (Maximum @ TC = 25 °C)

Current Diode Forward (Maximum @ TC = 100 °C)

Current Diode Forward (Maximum @ TC = 25 °C)

Current Pulsed (Maximum @ Tpulse limited by TJmax)

Current Pulsed (Maximum)

DC Collector Current (Maximum @ Tc=100 °C)

Die Size

Diode Continuous Forward Current

Diode Continuous Forward Current (Maximum @ TC=100 °C)

Diode Continuous Forward Current (Maximum @ TC=25 °C)

Diode Continuous Forward Current @ TC=100°C

Diode Forward Current (Maximum @ TC=100 °C)

Diode Forward Current (Maximum @ TC=25 °C)

Diode Forward Current (Nominal @ TC = 100 °C)

Diode Forward Current (Nominal @ TC = 25 °C)

Diode Forward Current (TC=25°C)

Diode Forward Voltage

Diode Maximum Forward Current

Diode Pulsed Current

Diode thermal resistance, junction – case

Emitter-Collector Breakdown Voltage

Factory Pack Quantity

Failure Rate

Fall Time

Fall Time (Typical @ TJ=150°C)

Fall Time (Typical)

Fall Time (tf)

Fall Time (tfi)

Forward Transconductance

Forward Transconductance (gfe)

G-E Leakage Current

G-E Threshold Voltage

Gate Charge

Gate Charge (Unspecified condition)

Gate Leakage Current

Gate Threshold Voltage

Gate Threshold Voltage (Vge(th))

Gate to Emitter Leakage Current

Gate to Emitter Threshold Voltage

Gate-Collector Charge (Qgc)

Gate-Emitter Charge

Gate-Emitter Charge (Qge)

Gate-Emitter Leakage Current

Gate-Emitter Leakage Current (IGES)

Gate-Emitter Threshold Voltage

Gate-Emitter Threshold Voltage (Vge(th))

Gate-Emitter Voltage

Gate-Emitter Voltage (Continuous)

Gate-Emitter Voltage (Maximum)

Gate-Emitter Voltage (VGES)

Gate-to-Emitter Voltage

Gate-to-Emitter Voltage (VGES)

Gate-to-Emitter Voltage (Vge)

Halogen Free

Height

IC (Maximum @ TC=100 °C)

IC (Maximum @ Tc=25 °C)

IC (Nominal @ TC = 25 °C)

IC (Nominal @ TC=100 °C)

IF (Maximum @ TC=100 °C)

IF (Maximum @ TC=25 °C)

IGBT Type

IGBT thermal resistance, junction – case

Ic (@ TC = 110 °C)

Ic (Maximum @ TC = 110 °C)

Ic (Nominal @ Tc=110 °C)

Ic Continuous (Maximum @ Tc=100 °C)

Ic Continuous (Nominal @ Tc=100 °C)

Industrial Grade

Input Capacitance

Input Capacitance (Cies)

Input Type

Internal Emitter Inductance (LE)

Junction Temperature Max

Junction to Case Thermal Resistance

Junction-to-Case Thermal Resistance (Diode)

Junction-to-Case Thermal Resistance (IGBT)

Lead Soldering Temperature

Lead Spacing

Lead Style

Lead Temperature for Soldering

Leakage Current (Maximum @ VCE = 0, VGE = ± 20 V)

Length

Maximum Collector to Emitter dv/dt

Maximum Gate Emitter Voltage

Maximum Junction Temperature

Maximum Junction Temperature (TJ)

Maximum Lead Temp. for Soldering

Maximum Lead Temperature

Maximum Lead Temperature for Soldering

Maximum Operating Temperature

Maximum Power Dissipation (Maximum @ TC=100 °C)

Maximum Power Dissipation (Maximum @ T_C=100 °C)

Medical Grade

Minimum Operating Temperature

Mounting Style

Mounting Torque

Mounting Type

Nominal Current

Number of Pins

Operating Junction Temperature

Operating Junction Temperature Range

Operating Temperature

Operating Temperature (Minimum/Maximum)

Operating Temperature - Maximum

Output Capacitance

Output Capacitance (Coes)

PD (Maximum @ TC=100 °C)

PD (Maximum @ Tc=25 °C)

Package Code

Package Type

Packaging Type

Packing Type

Pb-Free

Pd Max (Maximum @ Tc=100 °C)

Power

Power - Max

Power Dissipation

Power Dissipation (@ TC = 25 °C)

Power Dissipation (@ Tc=100 °C)

Power Dissipation (Max)

Power Dissipation (Maximum @ TC=100 °C)

Power Dissipation (Maximum @ TC=25 °C)

Power Dissipation (Maximum)

Power Dissipation (Nominal @ TC=25 °C)

Power Dissipation (Nominal @ Tc=100 °C)

Power Dissipation (Unspecified condition)

Power Dissipation Derating

Power Dissipation Max (Maximum)

Pulse Collector Current

Pulsed Collector Current

Pulsed Collector Current (ICM)

Pulsed Collector Current (ILM/ICM)

Pulsed Collector Current (Maximum)

Pulsed Collector Current @ TC=25°C

Pulsed Diode Forward Current

Pulsed Diode Maximum Forward Current

Reflow Soldering Temperature

Reverse Recovery Time

Reverse Recovery Time (Typical)

Reverse Recovery Time (trr)

Reverse Transfer Capacitance

Reverse Transfer Capacitance (Cres)

Reverse Voltage Avalanche Energy

Rise Time

Rise Time (tr)

RthJC (Maximum)

RθJC (Maximum)

SCIS Energy

SVHC Present

Saturation Voltage (Maximum @ 15 V, 40 A)

Saturation Voltage (Maximum @ VGE = 15 V, IC = 35 A, TJ = 175 °C)

Saturation Voltage (Maximum @ VGE = 15 V, IC = 40 A, TJ = 175 °C)

Saturation Voltage (Maximum @ Vge = 15 V, Ic = 15 A, Tj = 175 °C)

Saturation Voltage (Typical @ VGE = 15 V, IC = 40 A)

Saturation Voltage (Typical @ Vge = 15 V, Ic = 15 A)

Short Circuit Withstand Time

Short circuit collector current

Soldering Temperature

Standard Package Qty

Standard Package Quantity

Storage Temperature

Storage Temperature (Tstg)

Storage Temperature Range

Storage Temperature Range (TSTG)

Supplier Device Package

Supplier Package

Switching Energy

Switching Energy (Eoff)

Switching Energy (Maximum @ on)

Switching Energy (Nominal @ off)

Switching Energy (On)

Switching Energy (Turn-Off)

Switching Energy (Typical @ off)

Switching Energy (Typical @ on)

Switching Energy (Typical)

Switching Energy (off)

Switching Energy (off) (Eoff)

Switching Energy - Turn-Off (Eoff)

Switching Safe Operating Area

Switching Safe Operating Area (SSOA)

Tape & Reel

Tape and Reel

Td (on

Td (on) / Tf (on)

Td (on/off)

Td (on/off) @ 25°C

Technology

Temperature Coeff. of Breakdown Voltage

Temperature Coefficient of Breakdown Voltage

Temperature Coefficient of Threshold Voltage

Termination Style

Test Condition

Thermal Resistance (Case to Sink)

Thermal Resistance (Junction-Ambient)

Thermal Resistance (Maximum)

Thermal Resistance (Typical)

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Case (Typical)

Thermal Resistance Junction Case (@ Diode)

Thermal Resistance Junction Case (@ IGBT)

Thermal Resistance Junction To Case (Maximum @ Diode)

Thermal Resistance Junction To Case (Maximum @ IGBT)

Thermal Resistance Junction To Case (Maximum)

Thermal Resistance Junction To Case (Nominal)

Thermal Resistance Junction To Case (Typical @ IGBT)

Thermal Resistance Junction To Case (Typical @ for Diode)

Thermal Resistance Junction To Case (Typical @ for IGBT)

Thermal Resistance Junction to Ambient (RθJA)

Thermal Resistance Junction-Case

Thermal Resistance Junction-to-Ambient

Thermal Resistance Junction-to-Case (Diode)

Thermal Resistance Junction-to-Case (IGBT)

Thermal Resistance Junction-to-Case (RθJC)

Thermal Resistance Junction-to-Case (Typical @ Diode)

Thermal Resistance, Junction to Case (RthJC)

Total Gate Charge (Qg)

Total Switching Loss

Transconductance

Transient Gate-Emitter Voltage

Transient Gate-to-Emitter Voltage

Turn off Switching Loss

Turn-Off Delay Time

Turn-Off Delay Time (Tj=25°C)

Turn-Off Delay Time (Typical)

Turn-Off Delay Time (td(off))

Turn-Off Switching Energy

Turn-Off Switching Energy (Eoff)

Turn-Off Switching Energy (Typical)

Turn-Off Switching Loss (Eoff)

Turn-On Delay Time

Turn-On Delay Time (Typical)

Turn-On Delay Time (td(on))

Turn-On Switching Loss

Typical Fall Time

Vce(on) (Max) @ Vge, Ic

Vce(on) @ Vge, Ic

Vce(sat) (Typical)

Voltage

Voltage - Collector Emitter Breakdown

Voltage - Collector Emitter Breakdown (Max)

Voltage - Maximum

Voltage Gate Emitter (Maximum)

Voltage Saturation Collector Emitter (Typical @ VGE = 15 V, IC = 25 A)

Weight

Width

Zero Gate Voltage Collector Current (ICES)

current (@ TC = 25 °C)

current (Maximum @ 25 °C)

current (Maximum @ TC = 100 °C)

current (Maximum @ TC = 110 °C)

current (Maximum @ TC = 25 °C)

current (Maximum @ TC = 25 °C, 1 ms)

current (Maximum @ TPULSE Limited by TJ Max)

current (Maximum @ tp limited by Tjmax)

current (Nominal @ Tc = 100 °C)

current (Typical @ TC = 100 °C)

pd (Nominal @ TC=100 °C)

tD(Off)

temperature (Maximum)

vcesat (Maximum @ VGE = 15 V, IC = 40 A, TJ = 175 °C)

voltage (Unspecified condition)

STGPL6NC60D

STMicroelectronics

850

Price on request

850

14 A

12 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

56 W

50 ns

TO-220

46.5µJ (on), 23.5µJ (off)

6.7ns/46ns

390V, 3A, 10Ohm, 15V

2.9V @ 15V, 3A

600 V

SGH40N60UFTU

On Semiconductor

837

Across 2 distributors

Distributor	Stock	MOQ	Country
Flip Electronics	450	-	-
Hybrid Electronics	387	-	-

Price on request

837

Distributor	Stock	MOQ	Country
Flip Electronics	450	-	-
Hybrid Electronics	387	-	-

40 A

97 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

160 W

TO-3P

160µJ (on), 200µJ (off)

15ns/65ns

300V, 20A, 10Ohm, 15V

2.6V @ 15V, 20A

600 V

HGTP10N120BN

On Semiconductor

820

Across 2 distributors

Distributor	Stock	MOQ	Country
Flip Electronics	800	-	-
Partservice	20	-	-

Price on request

820

Distributor	Stock	MOQ	Country
Flip Electronics	800	-	-
Partservice	20	-	-

35 A

100 nC

NPT

Standard

Through Hole

-55°C ~ 150°C (TJ)

298 W

TO-220-3

320 µJ

800 µJ

23 ns

960V, 10A, 10Ohm, 15V

165 ns

2.7 V

1200 V

HGTG30N60C3D

On Semiconductor

805

Across 2 distributors

Distributor	Stock	MOQ	Country
Braun Electronic Components	25	-	-
Flip Electronics	780	-	-

Price on request

805

Distributor	Stock	MOQ	Country
Braun Electronic Components	25	-	-
Flip Electronics	780	-	-

252 A

63 A

162 nC

±20 V

Standard

260 °C

Through Hole

-40°C ~ 150°C (TJ)

208 W

1.67 W/°C

60 ns

TO-247-3

1.05 mJ

2.5 mJ

60 A at 600 V

230 ns

1.8V @ 15V, 30A

600 V

IXGR60N60C2D1

IXYS

800

Price on request

800

75 A

140 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

250 W

35 ns

ISOPLUS247™

490µJ (off)

18ns/95ns

400V, 50A, 2Ohm, 15V

2.7V @ 15V, 50A

600 V

HGT1S10N120BNS

On Semiconductor

800

Price on request

800

35 A

100 nC

NPT

Standard

Gull Wing

Yes

Surface Mount

-55°C ~ 150°C (TJ)

298 W

Not Present

-55.0°C ~ 150.0°C

D²PAK (TO-263)

320 µJ

800 µJ

23 ns

960V, 10A, 10Ohm, 15V

165 ns

2.7 V

1200 V

FGA5065ADF

On Semiconductor

794

Price on request

794

100 A

72.2 nC

Trench Field Stop

Standard

Yes

Through Hole

-55°C ~ 175°C (TJ)

268 W

31.8 ns

TO-3PN

1.35 mJ

309 µJ

20.8 ns

400V, 50A, 6Ohm, 15V

62.4 ns

2.2 V

650 V

HGTP3N60C3

Harris Semiconductor

754

Price on request

754

6 A

17.3 nC

Standard

Through Hole

-40°C ~ 150°C (TJ)

33 W

TO-220AB

2V @ 15V, 3A

600 V

SGB8206ANTF4G

On Semiconductor

700

Price on request

700

20 A

Logic

Surface Mount

150 W

D2PAK

1.9V @ 4.5V, 20A

390 V

FGA6065ADF

On Semiconductor

670

Price on request

670

120 A

84 nC

Trench Field Stop

Standard

Yes

Through Hole

-55°C ~ 175°C (TJ)

306 W

110 ns

-55°C ~ 175°C

TO-3PN

2.46mJ (on), 520µJ (off)

25.6ns/71ns

400V, 60A, 6Ohm, 15V

2.3V @ 15V, 60A

650 V

NGTB40N65FL2WG

On Semiconductor

660

Price on request

660

80 A

170 nC

±20 V

Trench Field Stop

Standard

20 V

+ 175 C

Through Hole

-55 to +175 °C

-55°C ~ 175°C (TJ)

Pb−Free

366 W

183 W

72 ns

5 µs

°C ~ °C

TO-247-3

440µJ (off)

970µJ (on)

84ns/177ns

400V, 40A, 10Ohm, 15V

2V @ 15V, 40A

650 V

40 A

2.1 V

IRGP30B120KD-EP

Infineon Technologies

658

From Braun Electronic Components

Price on request

658

30 A

60 A

169 nC

±20 V

NPT

Standard

Through Hole

-55°C ~ 150°C (TJ)

300 W

120 W

120 A

300 ns

25 pcs

-55°C ~ 150°C

TO-247AD

1.07 mJ

600V, 25A, 5Ohm, 15V

0.83 °C/W

0.42 °C/W

4 V

1200 V

6 g

FGA50N100BNTD2

On Semiconductor

656

Price on request

656

50 A

257 nC

NPT and Trench

Standard

Yes

Through Hole

-55°C ~ 150°C (TJ)

156 W

75 ns

-55°C ~ 150°C

TO-3P

34ns/243ns

600V, 60A, 10Ohm, 15V

2.9 V @ 15V, 60A

1000 V

FGH80N60FDTU

On Semiconductor

600

Price on request

600

600 V

40 A

250 µA

600 V

80 A

120 nC

4.5V (Min) / 5.5V (Typ) / 7.0V (Max)

±400 nA

±20 V

Field Stop

2110 pF

Standard

Through Hole

-55°C ~ 150°C (TJ)

200 pF

290 W

116 W

160 A

36 ns

60 pF

-55°C ~ 150°C

TO-247-3

1 mJ

21 ns

0.6 V/°C

400V, 40A, 10Ohm, 15V

0.43 °C/W

40 °C/W

126 ns

520 µJ

1.8V (Typ) / 2.4V (Max)

600 V

IRG4RC10SPBF

Infineon Technologies

550

Price on request

550

14 A

15 nC

Standard

Surface Mount

-55°C ~ 150°C (TJ)

38 W

D-Pak

140 µJ

25 ns

480V, 8A, 100Ohm, 15V

1.8 V @ 15 V, 8 A

600 V

IXGH48N60B3D1

IXYS

550

Across 2 distributors

Distributor	Stock	MOQ	Country
Fe Components	424	-	-
Seba Components	126	-	-

Price on request

550

Distributor	Stock	MOQ	Country
Fe Components	424	-	-
Seba Components	126	-	-

280A

115nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

300 W

300W

100ns

TO-247AD

840µJ (on), 660µJ (off)

22ns/130ns

480V, 30A, 5Ohm, 15V

1.8V @ 15V, 32A

600V

ISL9V5036S3ST

On Semiconductor

514

Price on request

514

Yes

46 A

32 nC

Logic

Surface Mount

-40°C to 175°C

250 W

Not Present

-40.0°C ~ 175.0°C

D²PAK (TO-263)

Yes

10.8 µs

300V, 1kOhm, 5V

0.6 °C/W

1.6V @ 4V, 10A

390 V

HGT1S20N36G3VLS

On Semiconductor

499

Price on request

499

37.7 A

28.7 nC

Logic

Surface Mount

-40°C ~ 175°C (TJ)

150 W

TO-263AB

15 µs

300V, 10A, 25Ohm, 5V

1.9 V

415 V

STGW30NC60VD

STMicroelectronics

480

Price on request

480

80 A

100 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

250 W

44 ns

TO-247-3

220µJ (on), 330µJ (off)

31ns/100ns

390V, 20A, 3.3Ohm, 15V

2.5V @ 15V, 20A

600 V

SKW15N60

Infineon Technologies

480

Price on request

480

31 A

76 nC

NPT

Standard

Through Hole

-55°C ~ 150°C (TJ)

139 W

279 ns

PG-TO247-3-21

300µJ (on), 270µJ (off)

32ns/234ns

400V, 15A, 21Ohm, 15V

2.4V @ 15V, 15A

600 V

FGA40T65SHDF

On Semiconductor

478

Price on request

478

80 A

68 nC

Trench Field Stop

Standard

Yes

Through Hole

-55°C ~ 175°C (TJ)

268 W

101 ns

TO-3PN

1.22 mJ

440 µJ

18 ns

400V, 40A, 6Ohm, 15V

64 ns

1.81 V @ 15V, 40A

650 V

IXA37IF1200HJ

IXYS

452

Price on request

452

58 A

106 nC

Standard

Through Hole

-40°C ~ 150°C

195 W

350 ns

ISOPLUS247™

3.8 mJ

600V, 35A, 27Ohm, 15V

4.1 mJ

2.1 V

1200 V

AFGHL40T120RLD

On Semiconductor

450

Price on request

450

Yes

40 A

48 A

40 A

48 A

395 nC

±20 V

Yes

Trench Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

529 W

264

160 A

195 ns

-55.0°C ~ 175.0°C

TO-247-3

3.4mJ (on), 1.2mJ (off)

48ns/208ns

600V, 40A, 5Ohm, 15V

2.1V @ 15V, 40A

1200 V

IRGBC40S

Infineon Technologies

440

Price on request

440

31 A

50 A

±20 V

1600 pF

Standard Speed

65 W

Through Hole

-55°C ~ 150°C (TJ)

160 W

240 A

15 mJ

-55.0°C ~ 150.0°C

TO-220AB

0.50 °C/W

0.77 °C/W

80 °C/W

1100 ns

1.8V @ 15V, 31A

600 V

2.0 g

FGA4060ADF

On Semiconductor

430

Price on request

430

80 A

55.5 nC

Trench Field Stop

Standard

Yes

Through Hole

-55°C to 175°C (TJ)

238 W

26 ns

-55°C ~ 175°C

TO-3PN

1.37 mJ

250 µJ

16.8 ns

400 V, 40 A, 6 Ohm, 15 V

54.4 ns

2.3 V @ Vge=15 V, Ic=40 A

600 V

FGA6560WDF

On Semiconductor

411

Price on request

411

120 A

84 nC

Trench Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

306 W

110 ns

TO-3PN

2.46mJ (on), 520µJ (off)

25.6ns/71ns

400V, 60A, 6Ohm, 15V

2.3V @ 15V, 60A

650 V

FGPF30N30

On Semiconductor

408

Price on request

408

80 A

39 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

46 W

TO-220F-3

1.5V @ 15V, 10A

300 V

IRG4RC10SDTRPBF

Infineon Technologies

400

Price on request

400

14 A

15 nC

Standard

Surface Mount

-55°C ~ 150°C (TJ)

38 W

28 ns

D-Pak

310 µJ

3.28 mJ

Yes

76 ns

480V, 8A, 100Ohm, 15V

815 ns

1.8V @ 15V, 8A

600 V

NGB8206NG

On Semiconductor

398

From Braun Electronic Components

Price on request

398

20 A

Logic

Surface Mount

-55°C ~ 175°C (TJ)

150 W

D²PAK

-/5µs

300V, 9A, 1kOhm, 5V

1.9V @ 4.5V, 20A

390 V

FGL35N120FTDTU

On Semiconductor

375

Price on request

375

70 A

210 nC

Trench Field Stop

Standard

Yes

Through Hole

-55°C ~ 150°C (TJ)

368 W

337 ns

TO-264-3

2.5mJ (on), 1.7mJ (off)

34ns/172ns

600V, 35A, 10Ohm, 15V

2.2V @ 15V, 35A

1200 V

IRGS8B60KPBF

Infineon Technologies

361

Price on request

361

28 A

29 nC

NPT

Standard

Surface Mount

-55°C ~ 175°C (TJ)

167 W

D2PAK

160 µJ

23ns/140ns

400V, 8A, 50Ohm, 15V

140 ns

160 µJ

23 ns

2.2 V

600 V

HGT1S7N60C3DS9A

On Semiconductor

347

Price on request

347

14 A

140 ns

23 nC

Standard

Gull Wing

Surface Mount

60 W

37 ns

D²PAK (TO-263)

165µJ (on), 600µJ (off)

480V, 7A, 50Ohm, 15V

2V @ 15V, 7A

600 V

ISL9V5036P3

On Semiconductor

336

Price on request

336

Yes

Qualified

Yes

46 A

32 nC

±10 V

Logic

Through Hole

-40°C ~ 175°C

250 W

TO-220-3

10.8 µs

300V, 1kOhm, 5V

0.6 °C/W

1.6 V

390 V

IRG4BC20FD-S

Infineon Technologies

333

Price on request

333

16A

2.9S min, 5.1S typ

27nC

3.0V min, 6.0V max

±20V

9.0A

Standard

Surface Mount

-55°C to +150°C

24W

60W

64A

37ns

2.1°C/W

-55°C to +150°C

D2PAK

250µJ

640µJ

43ns

0.72V/°C

-11mV/°C

480V, 9A, 50Ohm, 15V

240ns

2V @ 15V, 9A

600V

1.44g

250µA

STGWT60H65DFB

STMicroelectronics

330

Price on request

330

80 A

306 nC

Trench Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

375 W

60 ns

TO-3P

1.09mJ (on), 626µJ (off)

51ns/160ns

400V, 60A, 5Ohm, 15V

2V @ 15V, 60A

650 V

SGH20N60RUFDTU

On Semiconductor

300

Price on request

300

32 A

55 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

195 W

95 ns

TO-3P

524µJ (on), 473µJ (off)

30ns/48ns

300V, 20A, 10Ohm, 15V

2.8V @ 15V, 20A

600 V

FGB3040CS

On Semiconductor

282

Price on request

282

Yes

21 A

15 nC

Logic

Surface Mount

-40°C ~ 175°C (TJ)

150 W

-40°C ~ 175°C

D²PAK-6

Yes

4.7 µs

300V, 1kOhm, 5V

1.6V @ 4V, 6A

430 V

FGH30N60LSDTU

On Semiconductor

268

Price on request

268

30 A

1.0V

60 A

225 nC

4.0V (min), 5.5V (typ), 7.0V (max)

±20 V

Standard

Through Hole

-55°C to 150°C

480 W

192 W

90 A

35 ns

-55°C to 150°C

TO-247-3

1.1 mJ

21 mJ

18 ns

400V, 30A, 6.8Ohm, 15V

0.26 °C/W

40 °C/W

250 ns

1.1V (typ) / 1.4V (max)

600 V

IRG4PC50KPBF

Infineon Technologies

258

Price on request

258

Discrete IGBT with diode

IRG4BC40KPBF

Infineon Technologies

232

Price on request

232

42 A

120 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

160 W

TO-220AB

620µJ (on)

330µJ (off)

30ns/140ns

480V, 25A, 10Ohm, 15V

30ns/140ns

2.6V @ 15V, 25A

600 V

IRGP4066-EPBF

Infineon Technologies

223

From Bristol Electronics

Price on request

223

300A

600V

1µA typ, 100µA max

140 A

50S

150nC

4.0V min, 5.25V typ, 6.5V max

±200nA

±20V

Trench

Standard

Through Hole

75A

-55 to 175°C

454 W

225A

TO-247AD

2.47mJ

2.16mJ

50ns

260mV/°C

400V, 75A, 10Ohm, 15V

0.24°C/W

0.33°C/W

40°C/W

±30V

200ns

2.1V @ 15V, 75A

600 V

IRG4BC20KDPBF

Infineon Technologies

215

Price on request

215

16 A

34 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

60 W

37 ns

TO-220AB

340 µJ

54 ns

480V, 9A, 50Ohm, 15V

180 ns

300 µJ

2.8 V

600 V

ISL9V3036S3ST

On Semiconductor

210

Price on request

210

21A

17nC

Logic

Yes

Surface Mount

-40°C ~ 175°C (TJ)

150W

TO-263AB

Yes

4.8µs

300V, 1kOhm, 5V

1.6V @ 4V, 6A

360V

FGP3040G2-F085

On Semiconductor

200

Price on request

200

Yes

AEC-Q101 Qualified

Yes

41 A

21 nC

±10 V

25.6 A

Logic

Through Hole

-55°C ~ 175°C

150 W

-55.0°C ~ 175.0°C

-55°C ~ 175°C

TO-220-3

900 ns

4.8 µs

1.25 V

400 V

SGP23N60UFTU

On Semiconductor

200

Price on request

200

23 A

Standard

Through Hole

-55°C ~ 150°C (TJ)

100 W

TO-220-3

115µJ (on), 135µJ (off)

17ns/60ns

300V, 12A, 23Ohm, 15V

2.6V @ 15V, 12A

600 V

NGTG35N65FL2WG

On Semiconductor

200

Price on request

200

35 A

70 A

650 V

70 A

125 nC

200 nA

+/- 20 V

Field Stop

Standard

Through Hole

-55°C ~ 175°C (TJ)

300 W

150 W

-55°C ~ 175°C

TO-247-3

840µJ (on), 280µJ (off)

840µJ (on)

280µJ (off)

72ns/132ns

400V, 35A, 10Ohm, 15V

0.50 °C/W

2V @ 15V, 35A

650 V

HGTD10N50F1

Harris Semiconductor

196

Price on request

196

12 A

13.4 nC

Standard

Through Hole

-55°C ~ 150°C (TJ)

75 W

I-PAK

2.5V @ 10V, 5A

500 V

FGY75T95LQDT

On Semiconductor

187

Price on request

187

75 A

150 A

663.3 nC

±20 V

Trench Field Stop

Standard

300 °C

Through Hole

-55°C ~ 175°C (TJ)

Rail

453 W

226 W

225 A

259 ns

30 pcs

TO-247-3

2 mJ

52 ns

600V, 37.5A, 4.7Ohm, 15V

0.33 °C/W

±30 V

496 ns

1.8 mJ

1.69V @ 15V, 75A

950 V

IKW50N65ES5XKSA1

Infineon Technologies

180

Price on request

180

50 A

1.35 V

80 A

120 nC

Trench

Yes

Standard

175 °C

Through Hole

-40 to 175 °C (junction)

274 W

70 ns

-55.0°C ~ 150.0°C

PG-TO247-3

1.23 mJ (on), 550 µJ (off)

20 ns / 127 ns

400V, 50A, 8.2Ohm, 15V

1.7 V

650 V

FGPF10N60UNDF

On Semiconductor

161

Price on request

161

20 A

37 nC

NPT

Standard

Through Hole

-55°C ~ 150°C (TJ)

42 W

37.7 ns

TO-220F-3

150 µJ

8 ns

400V, 10A, 10Ohm, 15V

52.2 ns

50 µJ

2.45 V

600 V

Showing 451-500 of 3,427 products

About Transistors - IGBTs - Single

Transistors - IGBTs - Single are essential components in the realm of discrete semiconductor products, specifically engineered for high-efficiency switching applications. These transistors are pivotal in managing power and controlling current in various electronic systems.

When sourcing IGBTs, it is crucial to consider key attributes such as Current, Gate Charge, IGBT Type, Input Type, and Operating Temperature. These specifications directly influence the performance and suitability of the transistors for your specific applications.

Applications for Transistors - IGBTs - Single include new product design and prototyping, production electronics assembly, maintenance and field replacement, and engineering evaluation and qualification. Each application may require different specifications, making it essential to validate lifecycle status and explore alternate-source options before submitting a Request for Quotation (RFQ).

Buyers are encouraged to prioritize parametric filtering based on critical specifications rather than brand preference to mitigate sourcing risks. Understanding the mechanical and electrical compatibility with existing design constraints is also vital for successful integration.

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