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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
499 pcs
|
499 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGT1S20N36G3VLS is an N-Channel IGBT manufactured by On Semiconductor, designed for high-speed power switching applications. It features a maximum collector-emitter voltage of 415V and a collector current rating of 37.7A, with a power dissipation of 150W. The device has a logic-level gate drive input, making it compatible with low-voltage control circuits.
Key electrical characteristics include a collector-emitter saturation voltage of 1.9V at Vge=5V, Ic=20A, and a typical gate charge of 28.7 nC. Switching times are characterized with a turn-on delay time of 15 µs under test conditions of 300V, 10A, 25Ω, and 5V gate drive. The device operates over a junction temperature range of -40°C to 175°C.
The HGT1S20N36G3VLS is packaged in a TO-263-3 (D²Pak) surface-mount package, which is suitable for automated assembly and provides efficient heat dissipation through the exposed tab. The surface-mount design allows for compact PCB layouts in power conversion and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 130+ | $2.30 | $2.30 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 415 V.
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, surface mount.
-40°C to 175°C (junction temperature).
Yes, it is marked as RoHS3 compliant, but this is unverified.
37.7 A maximum.
28.7 nC typical at 300V, 10A, 25Ω, 5V.
1.9 V maximum at Vge=5V, Ic=20A.