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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
375 pcs
|
375 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGL35N120FTDTU is a single IGBT from ON Semiconductor featuring Trench Field Stop technology. It is rated for a maximum collector-emitter breakdown voltage of 1200V and a continuous collector current of 70A, with a maximum power dissipation of 368W.
This device has a typical saturation voltage of 2.2V at 15V gate drive and 35A collector current. Switching performance is characterized by typical turn-on energy of 2.5mJ and turn-off energy of 1.7mJ under standard test conditions. The gate charge is 210nC, and typical delay times are 34ns on and 172ns off.
The FGL35N120FTDTU is housed in a TO-264-3 (TO-264AA) through-hole package and operates over a junction temperature range of -55°C to 150°C. It is designed for high-power switching applications requiring high voltage and current capability.
| Qty | Low | High |
|---|---|---|
| 375+ | $3.83 | $3.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage (Vces) is 1200V.
The maximum continuous collector current (Ic) is 70A.
The device is available in a TO-264-3 (TO-264AA) through-hole package.
The operating junction temperature range is -55°C to 150°C.
The typical Vce(on) is 2.2V at Vge=15V and Ic=35A.
The maximum power dissipation is 368W.