FGH80N60FDTU The FGH80N60FDTU is a 600V, 80A Field Stop IGBT from onsemi. It features low saturation voltage and fast switching, housed in a TO-247-3 package.
Mfr Part #:

FGH80N60FDTU

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FGH80N60FDTU is a 600V, 80A Field Stop IGBT from onsemi. It features low saturation voltage and fast switching, housed in a TO-247-3 package.
Total Stock: 600 pcs

FGH80N60FDTU Available from 1 distributor

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FGH80N60FDTU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage
Collector Current (Nominal @ TC = 100 °C)
Collector Cut-Off Current
Collector Emitter Saturation Voltage (Typical @ VGE=15 V, IC=40 A, TC=125 °C)
Collector-Emitter Voltage
Current
Gate Charge
Gate Threshold Voltage
Gate-Emitter Leakage Current
Gate-Emitter Voltage
IGBT Type
Input Capacitance
Input Type
Mounting Type
Operating Temperature
Output Capacitance
Packaging Method
Power
Power Dissipation (Maximum @ TC=100 °C)
Pulsed Collector Current
Reverse Recovery Time (trr)
Reverse Transfer Capacitance
Standard Package Quantity
Storage Temperature
Supplier Device Package
Switching Energy
Td (on
Temperature Coefficient of Breakdown Voltage
Test Condition
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Turn-Off Delay Time
Turn-Off Switching Energy
Vce(on) (Max) @ Vge, Ic
Voltage

FGH80N60FDTU Description

Short technical summary and product information.

The FGH80N60FDTU is a Field Stop IGBT designed for high efficiency power switching applications. It offers a collector-emitter voltage rating of 600V and continuous collector current of 80A at 25°C (40A at 100°C). The device is capable of handling pulsed currents up to 160A.

 

Electrical characteristics include low saturation voltage of 1.8V typical at 40A with 15V gate drive. Fast switching with turn-on delay of 21ns and turn-off delay of 126ns. Gate charge is 120nC. The device includes a co-packaged diode with reverse recovery time of 36ns.

 

Thermal and packaging: Maximum power dissipation is 290W at 25°C case temperature. Thermal resistance junction-to-case is 0.43°C/W. The device is housed in a TO-247-3 through-hole package, supplied in tube packaging with standard quantity of 30.

 

Applications and compliance: Suitable for induction heating, PFC, telecom, and ESS applications. The device is Pb-Free and RoHS compliant.

FGH80N60FDTU Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Canonical Name: FGH80N60FDTU IGBT, Field Stop, 600V, 80A, TO-247-3
Subcategory: Single IGBT

FGH80N60FDTU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FGH80N60FDTU Features

  • 600V collector-emitter voltage rating.
  • 80A continuous collector current capability.
  • Low saturation voltage of 1.8V typical.
  • Fast switching with 21ns turn-on delay.
  • RoHS compliant and Pb-Free.

FGH80N60FDTU Applications

  • Ideal for induction heating power supplies.
  • Used in power factor correction circuits.
  • Suitable for telecom and ESS systems.
  • Designed for high efficiency PFC applications.

FGH80N60FDTU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

600V.

What is the continuous collector current rating?

80A at 25°C case temperature, 40A at 100°C.

What is the package type?

TO-247-3.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the device RoHS compliant?

Yes, RoHS3 compliant and Pb-Free.

What is the typical saturation voltage?

1.8V at 40A, 15V gate drive.

What is the maximum power dissipation?

290W at 25°C case temperature.

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