| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
700 pcs
|
700 pcs | On Request | 1 | On Request | On Request | 1736+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Input Type | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The ON Semiconductor SGB8206ANTF4G is a single N-Channel Insulated Gate Bipolar Transistor (IGBT) suitable for various power switching applications. This component features a high collector-emitter breakdown voltage of 390V and can handle a maximum collector current of 20A. Its maximum power dissipation is rated at 150W.
The IGBT is designed with a logic input type, making it compatible with standard digital control signals. The saturation voltage (Vce(on)) is specified as a maximum of 1.9V at 4.5V gate-source voltage and 20A collector current, indicating efficient power handling.
This device is available in a surface mount package, specifically the TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, also known as D2PAK. This packaging is suitable for automated assembly processes and provides good thermal performance.
The SGB8206ANTF4G is described as RoHS3 Compliant, with an MSL rating of 1 Unlimited, and REACH Unaffected. These compliance details are based on available data and should be verified for critical applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (Ic) for the SGB8206ANTF4G is 20A.
The collector-emitter breakdown voltage (Vce) for the SGB8206ANTF4G is 390V.
The maximum power dissipation for the SGB8206ANTF4G is 150W.
The SGB8206ANTF4G uses a Logic input type.
The SGB8206ANTF4G is a surface mount device.
The SGB8206ANTF4G is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.
