| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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215 pcs
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215 pcs | On Request | 1 | On Request | On Request | 1124 | On Request | On Request |
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| Gate Charge | |
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| Vce(on) (Max) @ Vge, Ic | |
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The IRG4BC20KDPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It is rated for a collector-emitter voltage of 600 V and a collector current of 16 A, with a maximum power dissipation of 60 W. The collector-emitter saturation voltage is 2.8 V maximum at Vge = 15 V and Ic = 9 A, and the gate charge is 34 nC.
This single IGBT uses a standard gate drive and provides turn-on and turn-off switching energies of 340 µJ and 300 µJ, respectively, under 480 V, 9 A, and 50 Ω test conditions. Turn-on and turn-off delay times are 54 ns and 180 ns, and the reverse recovery time is 37 ns. It operates over a junction temperature range of -55°C to 150°C.
The device is supplied in a TO-220-3 package with a TO-220AB supplier device package for through-hole mounting. This makes it suitable for power switching applications requiring high voltage and current handling. The part is listed as RoHS compliant with MSL 1 and REACH unaffected.
The collector-emitter voltage rating is 600 V.
The collector current rating is 16 A.
The maximum power dissipation is 60 W.
The operating junction temperature range is -55°C to 150°C.
The device is available in a TO-220-3 package, with a TO-220AB supplier device package, for through-hole mounting.
The maximum collector-emitter saturation voltage is 2.8 V at Vge = 15 V and Ic = 9 A.
The part is listed as RoHS3 compliant.