FGA6065ADF The FGA6065ADF is a 650V, 120A Trench Field Stop IGBT from On Semiconductor. It features a low Vce(on) of 2.3V and is housed in a TO-3PN package.
Mfr Part #:

FGA6065ADF

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FGA6065ADF is a 650V, 120A Trench Field Stop IGBT from On Semiconductor. It features a low Vce(on) of 2.3V and is housed in a TO-3PN package.
Total Stock: 670 pcs

FGA6065ADF Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
670 pcs
670 pcs On Request 1 On Request On Request 20+ On Request On Request

FGA6065ADF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Gate Charge
IGBT Type
Input Type
Medical Grade
Mounting Type
Operating Temperature
Power
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Switching Energy
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

FGA6065ADF Description

Short technical summary and product information.

The FGA6065ADF is a single N-channel IGBT designed for high-efficiency power switching applications. It utilizes Trench Field Stop technology to achieve low saturation voltage and fast switching performance. Key electrical characteristics include a collector-emitter breakdown voltage of 650V, a continuous collector current rating of 120A, and a maximum power dissipation of 306W. The device features a typical Vce(on) of 2.3V at 15V gate voltage and 60A collector current. Switching energy is specified at 2.46mJ (on) and 520µJ (off) under test conditions of 400V, 60A, and 6Ω gate resistance. The gate charge is 84 nC. The device is through-hole mounted and available in a TO-3P-3 / SC-65-3 package, with the supplier device package being TO-3PN. The operating junction temperature range is -55°C to 175°C. According to available data, the device is RoHS3 compliant and REACH unaffected, with an MSL of 1 (unlimited). This IGBT is suitable for applications such as motor drives, inverters, and power supplies where high efficiency and reliability are required.

FGA6065ADF Quick Information

Product Type: IGBT (Insulated Gate Bipolar Transistor)
Canonical Name: FGA6065ADF IGBT, 650V, 120A, Trench Field Stop
Subcategory: Single IGBT

FGA6065ADF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FGA6065ADF Features

  • 650V collector-emitter breakdown voltage.
  • 120A continuous collector current.
  • Low Vce(on) of 2.3V typical.
  • Trench Field Stop technology for fast switching.
  • Through-hole TO-3PN package.

FGA6065ADF Applications

  • Used in motor drive inverters.
  • Suitable for power supply converters.
  • Ideal for induction heating systems.
  • Applied in UPS and welding equipment.

FGA6065ADF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the FGA6065ADF?

650V.

What package does the FGA6065ADF come in?

TO-3P-3, SC-65-3 (supplier device package TO-3PN).

What is the operating temperature range?

-55°C to 175°C (junction).

Is the FGA6065ADF RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the typical Vce(on)?

2.3V at 15V gate voltage and 60A collector current.

What is the gate charge?

84 nC.

What is the reverse recovery time?

110 ns.

Home
Account

Categories