Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current - Collector, pulsed | |
| Input Type | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| SVHC Present | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Td (on/off) @ 25°C | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The SGP23N60UFTU is a single insulated-gate bipolar transistor (IGBT) from onsemi designed for high-efficiency power switching. It is rated for a maximum collector-emitter voltage of 600 V, a continuous collector current of 23 A, and a pulsed collector current of 92 A. The device can dissipate up to 100 W of power.
With a maximum collector-emitter saturation voltage of 2.6 V at 15 V gate-emitter drive and 12 A collector current, this IGBT offers controlled conduction losses. Its fast switching response is indicated by typical turn-on and turn-off delay times of 17 ns and 60 ns, along with switching energy values of 115 µJ (on) and 135 µJ (off).
The SGP23N60UFTU is supplied in a TO-220-3 package with through-hole mounting, simplifying heat sink attachment and board integration. The junction temperature range extends from -55°C to 150°C, supporting reliable operation in thermal environments typical of power electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V.
23 A.
100 W.
2.6 V maximum at a gate-emitter voltage of 15 V and collector current of 12 A.
Turn-on delay is 17 ns and turn-off delay is 60 ns at 25°C.
-55°C to 150°C.
TO-220-3 with through-hole mounting.