| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
196 pcs
|
196 pcs | On Request | 1 | On Request | On Request | 96 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The HGTD10N50F1 is an N-channel insulated-gate bipolar transistor (IGBT) manufactured by Harris Semiconductor. It is rated for a collector-emitter breakdown voltage of 500V and a collector current of 12A. The device is specified for a maximum power dissipation of 75W and operates over a junction temperature range of -55°C to 150°C.
The IGBT features a standard input type and a collector-emitter saturation voltage of 2.5V at Vge=10V and Ic=5A. A gate charge of 13.4nC supports gate drive design considerations. These characteristics make it suited for moderate-speed switching in power conversion and motor control applications.
The HGTD10N50F1 is available in a TO-251-3 short-lead IPak package (TO-251AA) with a supplier device package of I-PAK. Mounting is through-hole, suitable for solder-board assembly in discrete power circuits.
| Qty | Low | High |
|---|---|---|
| 145+ | $2.06 | $2.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vces) is 500V.
It is available in a TO-251-3 short-leads IPak package (TO-251AA) with an I-PAK supplier package, through-hole mounting.
The junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 compliant, though this has not been independently verified.
500V collector-emitter breakdown voltage, 12A collector current, and 75W maximum power dissipation.
2.5V maximum at Vge=10V and Ic=5A.
13.4nC.