IRGP4066-EPBF The IRGP4066-EPBF is a 600V, 75A Trench IGBT from Infineon Technologies. It features low VCE(on) and is suitable for high-efficiency power switching applications.
Mfr Part #:

IRGP4066-EPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IRGP4066-EPBF is a 600V, 75A Trench IGBT from Infineon Technologies. It features low VCE(on) and is suitable for high-efficiency power switching applications.
Total Stock: 223 pcs

IRGP4066-EPBF Available from 1 distributor

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223 pcs
223 pcs On Request 1 On Request On Request 2026-02-25 06:16:38 On Request On Request

IRGP4066-EPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Clamped Inductive Load Current
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Leakage Current
Collector-to-Emitter Saturation Voltage (TJ=150°C)
Collector-to-Emitter Saturation Voltage (TJ=25°C)
Continuous Collector Current (TC=100°C)
Continuous Collector Current (TC=25°C)
Current
Forward Transconductance
Gate Charge
Gate Threshold Voltage
Gate to Emitter Leakage Current
Gate-to-Emitter Voltage
IGBT Type
Input Type
Maximum Power Dissipation (TC = 25 °C)
Maximum Power Dissipation (TC=100°C)
Mounting Type
Nominal Current
Operating Temperature
Power
Pulse Collector Current
Supplier Device Package
Switching Energy
Switching Energy (off)
Tape & Reel
Td (on
Temperature Coefficient of Breakdown Voltage
Temperature Coefficient of Gate Threshold Voltage
Test Condition
Thermal Resistance (Case to Sink)
Thermal Resistance - Junction to Case
Thermal Resistance Junction-to-Ambient
Transient Gate-to-Emitter Voltage
Turn-Off Delay Time
Vce(on) (Max) @ Vge, Ic
Voltage

IRGP4066-EPBF Description

Short technical summary and product information.

The IRGP4066-EPBF is a 600V, 75A Trench IGBT manufactured by Infineon Technologies. It is designed for high-efficiency power switching applications requiring low conduction and switching losses. The device features a typical VCE(on) of 1.7V at 75A and 15V gate drive, with a maximum junction temperature of 175°C.

 

Key electrical specifications include a collector-to-emitter breakdown voltage of 600V, continuous collector current of 140A at 25°C case temperature (90A at 100°C), and a maximum power dissipation of 454W at 25°C. The IGBT has a gate threshold voltage range of 4.0V to 6.5V and a typical gate charge of 150nC.

 

The device is housed in a TO-247-3 package (TO-247AD) with through-hole mounting. It is lead-free and RoHS compliant. The IGBT is suitable for applications such as motor drives, inverters, and power supplies where high efficiency and ruggedness are required.

IRGP4066-EPBF Quick Information

Product Type: Insulated Gate Bipolar Transistor (IGBT)
Canonical Name: Infineon Technologies IRGP4066-EPBF 600V 75A Trench IGBT
Subcategory: Single

IRGP4066-EPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimi
REACH Status: REACH Unaffected
Lead Free: Lead Free Package

IRGP4066-EPBF Features

  • Low VCE(on) of 1.7V typical at 75A.
  • 600V collector-to-emitter breakdown voltage.
  • 75A nominal current rating.
  • Maximum junction temperature of 175°C.
  • Lead-free and RoHS compliant package.

IRGP4066-EPBF Applications

  • Used in motor drive inverters.
  • Suitable for UPS and power supply systems.
  • Ideal for high-efficiency power conversion.
  • Applicable in welding equipment.

IRGP4066-EPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-to-emitter breakdown voltage?

600V minimum.

What package does the IRGP4066-EPBF come in?

TO-247-3 (TO-247AD) through-hole package.

What is the operating junction temperature range?

-55°C to 175°C.

Is the IRGP4066-EPBF RoHS compliant?

Yes, it is listed as RoHS3 compliant and has a lead-free package.

What is the typical gate charge?

150nC.

What is the maximum continuous collector current at 25°C?

140A.

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