| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
411 pcs
|
411 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Gate Charge | |
| IGBT Type | |
| Input Type | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Reverse Recovery Time (trr) | |
| Supplier Device Package | |
| Switching Energy | |
| Td (on | |
| Test Condition | |
| Vce(on) (Max) @ Vge, Ic | |
| Voltage |
The FGA6560WDF is a single N-channel IGBT manufactured by On Semiconductor using advanced Trench Field Stop technology. It is rated for a maximum collector-emitter breakdown voltage of 650V and a continuous collector current of 120A, with a maximum power dissipation of 306W.
The device exhibits a typical Vce(on) of 2.3V at Vge=15V and Ic=60A. Switching performance is characterized by a gate charge of 84 nC, with turn-on energy of 2.46mJ and turn-off energy of 520µJ under test conditions of 400V, 60A, 6Ω gate resistance, and 15V gate drive. Delay times are 25.6ns (on) and 71ns (off). The internal anti-parallel diode has a reverse recovery time of 110ns.
The FGA6560WDF is offered in a TO-3P-3 (SC-65-3) package with through-hole mounting (supplier device package TO-3PN). It operates over a junction temperature range of -55°C to 175°C. The input type is standard (standard gate drive).
| Qty | Low | High |
|---|---|---|
| 411+ | $1.25 | $1.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
120A.
2.3V maximum at Vge=15V, Ic=60A.
TO-3P-3 (SC-65-3) through-hole, with supplier device package TO-3PN.
-55°C to 175°C (junction temperature).
RoHS3 compliant (unverified).
