| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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333 pcs
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333 pcs | On Request | 1 | On Request | On Request | 633 | On Request | On Request |
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The IRG4BC20FD-S is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, co-packaged with an ultrafast soft recovery diode. It is rated for a collector-to-emitter voltage of 600V and a continuous collector current of 16A at 25°C (9A at 100°C). The device features a low typical collector-to-emitter saturation voltage of 1.66V at 9A and 15V gate drive, ensuring high efficiency in medium-frequency switching applications.
Designed for hard switching frequencies from 1 to 5 kHz and resonant mode operation above 20 kHz, this IGBT is suitable for motor drives, power supplies, and induction heating. The co-packaged HEXFRED diode provides ultra-soft recovery, reducing switching losses and snubbing requirements.
The device is housed in a surface mount D2PAK (TO-263) package, offering a low thermal resistance of 2.1°C/W junction-to-case for the IGBT and 3.5°C/W for the diode. The operating junction temperature range is -55°C to +150°C. The part is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 150+ | $2.88 | $2.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-to-emitter voltage rating is 600V (maximum).
The device is supplied in a D2PAK (TO-263-3) surface mount package.
The operating junction temperature range is -55°C to +150°C.
The database indicates RoHS3 compliance, but this is unverified and there is a conflict with another source reporting non-compliance.
The maximum continuous collector current is 16A at Tc=25°C and 9A at Tc=100°C.
The typical Vce(on) is 1.66V at Ic=9A, Vge=15V, Tj=25°C.
The total gate charge is 27 nC.